A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO.sub.2 or SiON that covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of a first p-side pad opening; a second protective layer made of Al.sub.2O.sub.3 that covers the first protective layer, a side surface of a p-side semiconductor layer, and a side surface of the active layer in a portion different from that of a second p-side pad opening; and a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.

A method for manufacturing a light-emitting device includes providing a transparent member having a protrusion formed at an upper surface of the transparent member. A first resin portion is placed on the protrusion in which the first resin portion has a solid form and is made from a first resin material of which the viscosity decreases when heated. A light-emitting element is placed on the first resin portion, the light-emitting element is caused to be self-aligned with respect to the protrusion by reducing a viscosity of the first resin portion by heating to a first temperature. The first resin portion is solidified by cooling.

A semiconductor light emitting device package includes a circuit board with an upper pad, a light emitting diode chip on the circuit board and having a first surface facing the circuit board and a second surface opposing the first surface, and the light emitting diode chip including a substrate, a semiconductor stack structure on the substrate that emits ultraviolet light, and electrodes connected to the semiconductor stack structure, connection bumps between the circuit board and the light emitting diode chip, the connection bumps connecting the upper pad and the electrodes, an underfill resin on the upper pad of the circuit board and covering at least a portion of a side surface of the light emitting diode chip, and a passivation layer on the light emitting diode chip and the underfill resin, the passivation layer covering the underfill resin and being spaced apart from the semiconductor stack structure.

An electronic device includes a substrate, a first light-emitting unit, a first light conversion unit, and a first buffer layer. The first light-emitting unit is disposed on the substrate. The first light conversion unit is disposed on the first light-emitting unit. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit. The thickness of the first light conversion unit is greater than the thickness of the first light-emitting unit.

A semiconductor light emitting device includes a first conductivity type semiconductor, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer, an electrode layer on the second conductivity type semiconductor, and a passivation layer covering at least side surfaces of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer. The angle between the lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less. The passivation layer includes a first portion disposed on a side surface of the first conductivity type semiconductor and having a first thickness, and a second portion on a side surface of the electrode layer and having a second thickness different from the first thickness.

A display device may include a substrate including a display area and non-display area, a signal line disposed in the display area of the substrate, a test line disposed in the non-display area and connected to the signal line, and a first lower etching stopper layer disposed between the substrate and the test line. A rear surface edge of the substrate may be located further inside than an outer side edge of the first lower etching stopper layer. An end portion of the test line may include a portion that is located further outside than the rear surface edge of the substrate and does not overlap the substrate.

A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.

A light emitting device and a manufacturing method thereof are provided. The light emitting device includes a light emitting unit, a fluorescent layer, a reflective layer, and a light-absorbing layer. The light emitting unit has a top surface, a bottom surface opposite to the top surface, and a side surface located between the top surface and the bottom surface. The light emitting unit includes an electrode disposed at the bottom surface. The fluorescent layer is disposed on the top surface of the light emitting unit. The reflective layer covers the side surface of the light emitting unit. The light-absorbing layer covers the reflective layer, so that the reflective layer is located between the side surface of the light emitting unit and the light-absorbing layer.