A method of manufacturing a display apparatus including steps of forming a plurality of light emitting diode chips spaced apart from one another at a predetermined interval on a first manufacturing substrate and transferring the light emitting diode chips to a second manufacturing substrate by laser irradiation, in which the light emitting diode chips include a light emitting structure including a first-type semiconductor layer and a second-type semiconductor layer, a first-type electrode disposed on the first-type semiconductor layer, and a second-type electrode disposed on the second-type semiconductor layer.

Discussed is an assembly substrate used in a display manufacturing method for placing semiconductor light-emitting devices to predetermined positions thereof using an electric field and a magnetic field, the assembly substrate including a base part; a plurality of assembly electrodes extending in one direction and disposed in parallel on the base part; a dielectric layer disposed on the base part to cover the plurality of assembly electrodes; and partition walls disposed on the dielectric layer and defining cells at predetermined intervals along the one direction of the plurality of assembly electrodes so as to overlap portions of the plurality of assembly electrodes, and the semiconductor light-emitting devices being placed into the cells, respectively, wherein a protrusion part protrudes inward from at least one of inner surfaces of each of the cells.

A method of manufacturing the light emitting package structure is provided. The method includes: a preparation process: mounting a light emitting unit on a substrate; a dispensing process: coating a sealant on a first joint area of the substrate; a cover-enclosing process: disposing a cover element having a second joint area on the substrate, the first joint area and the second joint area joined to each other by the sealant; a vacuum process: reducing an ambient pressure to a first pressure lower than the original ambient pressure; a pressure-adjusting process: adjusting the ambient pressure around the package structure to a second pressure higher than the first pressure; and a curing process: curing the sealant.

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip with a radiation passage surface on a connection carrier, applying a deformable spacer to the radiation passage surface of the semiconductor chip, inserting the connection carrier with the semiconductor chip into a cavity of a tool, deforming, by the tool, the deformable spacer and encapsulating the semiconductor chip with a casting compound.

A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.

Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.

A method of forming a plurality of monolithic light emitting diode (LED) pixels (1) for a LED display is provided. The method comprises forming a common (102) semiconducting layer comprising a Group III-nitride on a sacrificial substrate and forming n array of light emitting diode (LED) subpixels on a surface of the common semiconducting layer. The method further includes forming a planarising dielectric layer on the array of LED subpixels. The array of the LED subpixels is divided into a plurality of monolithic LED pixels by etching a grid of pixel defining trenches to the sacrificial substrate, wherein each monolithic LED pixel comprises at least two LED subpixels. A sacrificial dielectric layer is formed on the pixel trenches to form a bonding surface. A handling substrate is bonded to the bonding surface, wherein first portions of the sacrificial substrate are selectively removed for separating each of the monolithic LED pixels. Light extraction features are formed for each of the monolithic LED pixels comprising: selectively removing second portions of the sacrificial substrate aligned with each of the LED subpixels and the sacrificial dielectric layer is removed to separate each monolithic LED pixel from the handling substrate.

The disclosure provides an electronic device and a method of manufacturing an electronic device. The electronic device includes a first substrate, a plurality of light-emitting dies, a transparent material layer, a sealing material, and a second substrate. The plurality of light-emitting dies are disposed on the first substrate. The transparent material layer is disposed on the first substrate. The sealing material is disposed on the first substrate and surrounds the transparent material layer. The second substrate is adhered to the first substrate through the transparent material layer and the sealing material.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.