Patent classifications
H01P1/047
Low profile phased array
A low profile array (LPA) includes an antenna element array layer having at least one Faraday wall, and a beamformer circuit layer coupled to the antenna element array layer. The beamformer circuit layer has at least one Faraday wall. The Faraday walls extends between ground planes associated with at least one of the antenna element array layer and the beamformer circuit layer.
Interlocking modular beamformer
An array includes a support structure configured to support columns of beamformer assemblies, and a plurality of beamformer assemblies supported by the support structure. Each beamformer assembly includes at least one beamformer having at least one first beamformer segment and at least one second beamformer segment configured to interconnect with the first beamformer segment.
Additive manufacturing technology (AMT) low profile radiator
Described herein is a low profile radiator (LPR) manufactured using additive manufacturing technology (AMT). Such an AMT radiator is suitable for use in an array antenna which may be fabricated using AMT manufacturing processes.
SIGNAL TRANSMISSION CIRCUIT AND PRINTED CIRCUIT BOARD
A signal transmission circuit includes a printed circuit board including a surface layer including a signal transmission path that transmits a signal, a signal line through hole that connects the signal transmission path with a signal layer arranged in an inner layer of the printed circuit board, a ground layer of the inner layer of the printed circuit board that forms a return current transmission path for the signal transmission path, and a ground through hole that is connected to the ground layer adjacent to the signal line through hole. A ground pattern including ground areas disposed with a certain distance therebetween and a side ground area connected with at least one end side of the ground areas is disposed at positions of both sides of the signal transmission path. The ground through hole is disposed to connect the ground pattern with the ground layer.
Systems and Processes for Increasing Semiconductor Device Reliability
A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.
FAN-OUT TRANSITION STRUCTURE FOR TRANSMISSION OF mm-WAVE SIGNALS FROM IC TO PCB VIA CHIP-SCALE PACKAGING
The disclosed systems, structures, and methods are directed to a mm-Wave communication structure employing a first transmission structure employing a first ring transition structure followed by a first ground structure and a second ground structure configured to carry a ground signal, a second transmission structure employing a second ring transition structure followed by a third ground structure and a fourth ground structure configured to carry the ground signal, a third transmission structure configured to carry a mm-Wave signal, wherein the third transmission structure begins at the center of the first ring transition structure and the second ring transition structure and the third transmission structure is coplanar with the second transmission structure, and a fourth transmission structure configured to operatively couple an IC and the first transmission layer, the second transmission layer, and the third transmission structure.
METHOD AND/OR APPARATUS FOR FRICTIONLESS WIDEBAND HIGH-POWER RADIO-FREQUENCY POWER TRANSMISSION ACROSS A FREELY MOVING INTERFACE
An apparatus includes a radio frequency (RF) translational joint. The RF translational joint includes a first coaxial line. The RF translational joint includes a first constant impedance coaxial transition connected to the first initial coaxial line. The RF translational joint includes a coax-to-stripline transition. The RF translational joint includes a stripline section connected to the first constant impedance coaxial transition via the coax-to-stripline transition. The RF translational joint includes a stripline-to-coax transition. The RF translational joint includes a second constant impedance coaxial transition connected to the stripline section via the stripline-to-coax transition. The RF translation joint includes a second coaxial line connected to the second constant impedance coaxial transition.
Method and/or apparatus for frictionless wideband high-power radio-frequency power transmission across a freely moving interface
An apparatus includes a radio frequency (RF) translational joint. The RF translational joint includes a first coaxial line. The RF translational joint includes a first constant impedance coaxial transition connected to the first initial coaxial line. The RF translational joint includes a coax-to-stripline transition. The RF translational joint includes a stripline section connected to the first constant impedance coaxial transition via the coax-to-stripline transition. The RF translational joint includes a stripline-to-coax transition. The RF translational joint includes a second constant impedance coaxial transition connected to the stripline section via the stripline-to-coax transition. The RF translation joint includes a second coaxial line connected to the second constant impedance coaxial transition.
Fan-out transition structure for transmission of mm-Wave signals from IC to PCB via chip-scale packaging
The disclosed systems, structures, and methods are directed to a mm-Wave communication structure employing a first transmission structure employing a first ring transition structure followed by a first ground structure and a second ground structure configured to carry a ground signal, a second transmission structure employing a second ring transition structure followed by a third ground structure and a fourth ground structure configured to carry the ground signal, a third transmission structure configured to carry a mm-Wave signal, wherein the third transmission structure begins at the center of the first ring transition structure and the second ring transition structure and the third transmission structure is coplanar with the second transmission structure, and a fourth transmission structure configured to operatively couple an IC and the first transmission layer, the second transmission layer, and the third transmission structure.
Antenna Packaging Module And Making Method Thereof
The present disclosure provides an antenna packaging module and the making method. The antenna packaging module comprises a redistribution layer, an antenna structure, a semiconductor chip, a third packaging layer, and a packaging antenna connector to an external circuit board. The antenna structure includes a connector opening and at least a first antenna structure and a second antenna structure stacked on one surface of the redistribution layer. The packaging antenna connector is designed in the connector opening and is electrically connected to the redistribution layer. Electrical terminals are provided through the packaging antenna connector disposed in the connector opening, thus reducing the antenna signal loss. The antenna packaging module requires neither any metal wire ends electrically connected to redistribution layer, nor a flip-chip process.