A millimeter wave RF phase shifter includes an input and an output. The RF phase shifter further includes a transmission line coupled to the input. The transmission line can include a plurality of taps. The RF phase shifter can further include a plurality of switching devices. Each switching device can be coupled between the output and a corresponding tap of the plurality of taps. The RF phase shifter can include a control device operatively coupled to the plurality of switching devices. The control device can be configured to control operation of the plurality of switching devices to selectively couple one of the plurality of taps to the output to control a phase shift of a RF signal propagating on the transmission line.

A millimeter wave RF phase shifter includes an input and an output. The RF phase shifter further includes a transmission line coupled to the input. The transmission line can include a plurality of taps. The RF phase shifter can further include a plurality of switching devices. Each switching device can be coupled between the output and a corresponding tap of the plurality of taps. The RF phase shifter can include a control device operatively coupled to the plurality of switching devices. The control device can be configured to control operation of the plurality of switching devices to selectively couple one of the plurality of taps to the output to control a phase shift of a RF signal propagating on the transmission line.

A millimeter wave RF phase shifter includes an input and an output. The RF phase shifter further includes a transmission line coupled to the input. The transmission line can include a plurality of taps. The RF phase shifter can further include a plurality of switching devices. Each switching device can be coupled between the output and a corresponding tap of the plurality of taps. The RF phase shifter can include a control device operatively coupled to the plurality of switching devices. The control device can be configured to control operation of the plurality of switching devices to selectively couple one of the plurality of taps to the output to control a phase shift of a RF signal propagating on the transmission line.

This application provides a semiconductor switch device, a manufacturing method thereof, and a solid-state phase shifter. The semiconductor switch device includes a first semiconductor layer, intrinsic layers, and second semiconductor layers that are stacked. There are at least two intrinsic layers. The second semiconductors are in a one-to-one correspondence with the intrinsic layers, and each second semiconductor layer is stacked on a side of a corresponding intrinsic layer away from the first semiconductor layer. The first semiconductor layer forms one PIN diode together with each first intrinsic layer and each second semiconductor layer. Any two adjacent PIN diodes are electrically isolated. Automatic parameter matching between the two PIN diodes is implemented by using a geometrically symmetric figure with centers of the two PIN diodes aligned, to improve linearity. In addition, the entire semiconductor switch device has a compact structure, to improve an integration degree and reduce costs.

This application provides a semiconductor switch device, a manufacturing method thereof, and a solid-state phase shifter. The semiconductor switch device includes a first semiconductor layer, intrinsic layers, and second semiconductor layers that are stacked. There are at least two intrinsic layers. The second semiconductors are in a one-to-one correspondence with the intrinsic layers, and each second semiconductor layer is stacked on a side of a corresponding intrinsic layer away from the first semiconductor layer. The first semiconductor layer forms one PIN diode together with each first intrinsic layer and each second semiconductor layer. Any two adjacent PIN diodes are electrically isolated. Automatic parameter matching between the two PIN diodes is implemented by using a geometrically symmetric figure with centers of the two PIN diodes aligned, to improve linearity. In addition, the entire semiconductor switch device has a compact structure, to improve an integration degree and reduce costs.

The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.

The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.

First and second paths (I,II) are connected in parallel between an input terminal (IN) and an output terminal (OUT). A high-pass filter (HPF) is provided in the first path (I). A low-pass filter (LPF) is provided in the second path (II). A switch (SW1-SW4) connects one of the high-pass filter (HPF) and the low-pass filter (LPF) to the input terminal (IN) and the output terminal (OUT) and disconnects the other. A transmission line (TL1,TL2) is provided on the first and second paths (I,II) respectively. A line length of the transmission line (TL1,TL2) is adjusted such that a resonance caused due to circuit constants of the high-pass filter (HPF) and the low-pass filter (LPF) and capacitance obtained when the switch (SW1-SW4) is OFF is shifted to a communication frequency band.

First and second paths (I,II) are connected in parallel between an input terminal (IN) and an output terminal (OUT). A high-pass filter (HPF) is provided in the first path (I). A low-pass filter (LPF) is provided in the second path (II). A switch (SW1-SW4) connects one of the high-pass filter (HPF) and the low-pass filter (LPF) to the input terminal (IN) and the output terminal (OUT) and disconnects the other. A transmission line (TL1,TL2) is provided on the first and second paths (I,II) respectively. A line length of the transmission line (TL1,TL2) is adjusted such that a resonance caused due to circuit constants of the high-pass filter (HPF) and the low-pass filter (LPF) and capacitance obtained when the switch (SW1-SW4) is OFF is shifted to a communication frequency band.

Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. Such circuits may include a temperature sensor configured to sense the temperature of at least a portion of a device, and a phase shifter configured to shift the phase of the signal output by the device, when the sensed temperature is outside a safe temperature range, e.g., above a predefined temperature threshold. The phase may be shifted discretely or continuously. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.