A hybrid coupler includes a 90° hybrid coupler and a first quarter wavelength conductive stub. The 90° hybrid coupler includes a coupling section, a first input transmission line that is coupled to the coupling section, a second input transmission line that is coupled to the coupling section, a first output transmission line that is coupled to the coupling section and a second output transmission line that is coupled to the coupling section. The first quarter wavelength conductive stub is coupled to the second output transmission line.

A method of fabricating and tuning a surface integrated waveguide (SIW) filter incudes covering upper and lower surfaces of a dielectric substrate with a metallic layer. The method includes drilling a plurality of vias on the dielectric substrate and covering the vias with the metallic layer, wherein a first group of vias forms one or more cavity resonators, a second group of vias defines coupling channels between the cavity resonators, a third group of vias defines an effective width and a fourth group of vias defines an effective length of the cavity resonators. The method includes varying a center frequency by increasing diameters of the second group of vias to decrease the width of the coupling channels and varying a roll-off by increasing diameters of the third and fourth groups of vias to decrease the effective width and the effective length of the resonators.

Example dielectric filters, transceiver devices, and base stations are described. One example dielectric filter includes a dielectric block whose surface is covered with a metal layer, where the dielectric block includes at least two resonant cavities. The dielectric block is provided with a via hole, the via hole is located between two adjacent resonant cavities, and an inner wall of the via hole is covered with a metal layer. A first partition ring is disposed on the surface of the dielectric block and is surrounding at least one opening of the via hole, and the dielectric block is exposed in an area enclosed by an inner edge of the first partition ring and an outer edge of the first partition ring.

A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

A high frequency filter A1 has frequency characteristics such that the amount of attenuation for an input electrical signal is smaller in a first frequency band f1 than in a second frequency band f2. The high frequency filter A1 is provided with a dielectric elastomer transducer 1 that includes a dielectric elastomer layer 13 and a pair of electrode layers 14 sandwiching the dielectric elastomer layer 13. The frequency characteristics are variable by the dielectric elastomer transducer 1. This configuration provides a high frequency filter having frequency characteristics that are variable and suitable for a lightweight and compact configuration.

Microelectronic assemblies that include a lithographically-defined substrate integrated waveguide (SIW) component, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate portion having a first face and an opposing second face; and an SIW component that may include a first conductive layer on the first face of the package substrate portion, a dielectric layer on the first conductive layer, a second conductive layer on the dielectric layer, and a first conductive sidewall and an opposing second conductive sidewall in the dielectric layer, wherein the first and second conductive sidewalls are continuous structures.

[Technical problem] A conventional dielectric waveguide input/output structure has a strength of coupling which is adjusted by a length of an input/output electrode. However, there is a limitation in an adjustable range of the coupling, which makes it impossible to have an input/output structure with wider bandwidth. [Solution to the technical problem] A dielectric waveguide input/output structure is provided, which comprises an input/output point provided near the center on one side of a bottom surface of a rectangular parallelepiped-shaped dielectric body, wherein an outer periphery of the dielectric body is covered with an electrically conductive film, except for an L-shaped lateral part extending along an edge of the bottom surface from opposite sides of the input/output point and for a surrounding part of the input/output point in a lateral surface with which the input/output point is in contact.

The disclosure discloses a concave triple-mode cavity resonance structure and a filter with the resonance structure. The structure comprises a cavity and a cover plate, wherein the cavity is internally provided with a dielectric resonance block and a dielectric support frame; at least one end face of the cavity and/or the dielectric response block is concave; the dielectric resonance block and the dielectric support frame form a triple-mode dielectric resonance rod; one end or any end of the cube-like dielectric resonance block is connected with the dielectric support frame; the dielectric support frame is connected with an inner wall of the cavity; and the dielectric response block and the dielectric support frame form triple-mode resonance in three directions along the X, Y and Z axes of the cavity.

A dielectric filter includes: a resonator body formed of dielectric material; surrounding dielectric portion present around the resonator body and formed of dielectric material having a relative permittivity lower than the dielectric material used to form the resonator body; and an input/output conductor portion formed of a conductor and configured to perform at least one supply of an electromagnetic wave to the resonator body and reception of an electromagnetic wave from the resonator body. The resonator body has a first end face and a second end face located at opposite ends in a first direction. The input/output conductor portion is located either at least part of the input/output conductor portion is contained in a space formed by shifting a virtual plane corresponding to the first end face in the first direction away from the second end face, or the input/output conductor portion is in contact with the space.

The present invention relates to a multi-mode filter comprising a carrier on which is mounted a dielectric resonator having a covering of an electrically conductive material in which there is provided an aperture and a coupling structure for coupling input signals to the dielectric resonator or for extracting filtered output signals from the dielectric resonator. The carrier is provided with an enclosing formation of electrically conductive material, which enclosing formation is electrically coupled to the electrically conductive covering of the dielectric resonator, such that the covering and the enclosing formation together form an electrically conductive enclosure for the dielectric resonator. The enclosure formed from the covering of the dielectric resonator and the enclosing formation increases the isolation of the filter and reduces leakage. The filter of the present invention is particularly suitable for use in cascaded resonator filter arrangements, and in duplex/diplex filters.