The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transmission rate than a 4th generation (4G) communication system such as Long-Term Evolution (LTE). The present disclosure provides a device for variable signal attenuation equipped in a stack-up structure inside an RFIC. The device for signal attenuation comprises: a first transmission line positioned on a first layer inside the RFIC; a second transmission line positioned on a second layer, which is adjacent to the first layer, and electromagnetically coupled to the first transmission line; and a control unit. The first transmission line comprises an impedance control unit on one side. The control unit can variably control the impedance control unit.

A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

A dissipative device has a planar configuration with one or more resistor elements formed on an insulating substrate. Conductors are formed on the insulating substrate and are coupled to the resistor element(s) to transmit signals to/from the resistor element(s). The geometry of and materials for the dissipative device allow the conductors to act as heat sinks, which conduct heat generated in the resistor element(s) to the substrate (and on to a coupled housing) and cool hot electrons generated by the resistor element(s) via electron-phonon coupling. The dissipative device can be used in cooling a signal to a qubit, a cavity system of a quantum superconducting qubit, or any other cryogenic device sensitive to thermal noise.

A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

The present disclosure is directed towards a frequency selective limiter having a first magnetic material disposed over a first dielectric material and a strip conductor disposed over the magnetic material. In some embodiments, the frequency selective limiter includes a second magnetic material disposed over the strip conductor and a second dielectric material disposed over the second magnetic material. The first and second dielectric material may have a lower relative permittivity than the first and second magnetic material. In an embodiment, the frequency selective limiter includes a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

A waveguide structure includes at least one transmission line and at least one conductive pattern layer. At least a portion of the transmission line and at least a portion of the conductive pattern layer overlap each other as observed from a surface side of the conductive pattern layer. A surface electrical resistance value of the conductive pattern layer is in a range of 0.005/ to 30/.

A device includes a thermally conductive and electrically insulative substrate having a first major surface and a second major surface. A coupling structure is configured to reduce the RF input signal by substantially a predetermined amount of attenuation power. A tuning circuit is characterized by a tuning reactance substantially matched to a predetermined system impedance. A resistor is disposed on a majority of the first major surface and is characterized by a parasitic capacitance that is substantially negated by the tuning reactance. The resistor includes a first resistive portion and a second resistive portion; each of the first resistive portion and the second resistive portion being configured to direct approximately one-half of the attenuation power to the ground portion.

A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

Provided herein are high frequency signal attenuators. In certain configurations, an integrated circuit includes a signal conductor that carries a radio frequency (RF) signal, a shield conductor routed with the signal conductor and biased with a ground voltage, and an attenuation circuit that provides a controllable amount of attenuation to the RF signal. The attenuation circuit includes a shunt circuit electrically connected between a signal tapping position of the signal conductor and a shield tapping position of the shield conductor. Connecting the shunt circuit in this manner enhances high frequency performance by reducing a length of an effective loop from the signal conductor to an adjacent portion of the shield conductor.

Disclosed is an attenuation reduction structure for high-frequency connection pads of a circuit board with an insertion component. The circuit board includes at least one pair of differential mode signal lines formed thereon. A substrate has upper and lower surfaces respectively provided with at least one pair of upper connection pads and lower connection pads. A first metal layer is formed on the lower surface of the substrate. The first metal layer includes an attenuation reduction grounding pattern structure. The attenuation reduction grounding pattern structure includes a hollow area and at least one protruded portion. The protruded portion extends from the first metal layer in a direction toward the lower connection pads.