Heat exchanger assemblies for electronic devices are disclosed. A heat exchanger assembly may include a heat transfer body that has a face that forms open passageways. A cover structure may be attached to the heat transfer body in a manner to enclose the open passageways, thereby forming a heat exchanger assembly that includes enclosed fluid conduits. In this regard, the enclosed fluid conduits may form complex and intricate patterns within the heat exchanger assembly that are tailored to the heat requirements of a particular application. Heat exchanger assemblies as described herein may be thermally coupled to a center waveguide section of a spatial power-combining device. The enclosed fluid conduits may be tailored based on locations of amplifiers within the center waveguide section to provide improved thermal operation of the spatial power-combining device.

A combiner-divider includes a first impedance converter disposed between the first port and the second port, a second impedance converter disposed between the first port and the third port, and an isolation unit disposed between the second port and the third port. The isolation unit includes a balun formed of a first semi-rigid cable and a second semi-rigid cable, and terminating resistors. Each line length of the first impedance converter, the second impedance converter, and the third impedance converter corresponds to wavelength at a center frequency. A relationship of each impedance Ri of the second port and the third port, an impedance Ro of the first port, and each impedance W of the first impedance converter and the second impedance converters is expressed by W=(2RiRo).sup..

A combiner-divider includes a first impedance converter disposed between the first port and the second port, a second impedance converter disposed between the first port and the third port, and an isolation unit disposed between the second port and the third port. The isolation unit includes a balun formed of a first semi-rigid cable and a second semi-rigid cable, and terminating resistors. Each line length of the first impedance converter, the second impedance converter, and the third impedance converter corresponds to wavelength at a center frequency. A relationship of each impedance Ri of the second port and the third port, an impedance Ro of the first port, and each impedance W of the first impedance converter and the second impedance converters is expressed by W=(2RiRo).sup..

Systems and techniques that facilitate high-density embedded broadside-coupled attenuators are provided. In various embodiments, an attenuator can comprise an output line. In various aspects, the attenuator can further comprise a reflectively-terminated input line that is broadside coupled to the output line. In various instances, a downstream end of the reflectively-terminated input line can be shorted to ground. In other instances, a downstream end of the reflectively-terminated input line can be open from ground. In various cases, the output line can exhibit a non-looped-back-layout.

A dummy load for high power and high bandwidth, the dummy load comprising a base plate, a resistive termination acting as a resistive load for dissipating radio frequency power at low frequencies, and at least one coaxial cable acting as a cable load for dissipating radio frequency power at high frequencies, the at least one coaxial cable being connected to the resistive termination. At least one of the resistive termination and the at least one coaxial cable is positioned on the base plate. The at least one coaxial cable has a cross section that varies over the length of the coaxial cable.

An integrated spring mounted chip termination for converting energy of a circuit into heat to be absorbed by a heatsink. The integrated spring mounted chip termination includes an input tab configured to connect to the circuit. The integrated spring mounted chip termination also includes a chip termination having a top surface. The chip termination includes an input contact located on the top surface and configured to connect to the input tab, a resistor element located on the top surface and connected to the input contact, and a ground contact located on the top surface and connected to the resistor element. The integrated spring mounted chip termination also includes a formed ground spring connected to the ground contact of the chip termination, the formed ground spring configured to attach the chip termination to the heatsink, such that the chip termination and the heatsink are in contact.

An integrated spring mounted chip termination for converting energy of a circuit into heat to be absorbed by a heatsink. The integrated spring mounted chip termination includes an input tab configured to connect to the circuit. The integrated spring mounted chip termination also includes a chip termination having a top surface. The chip termination includes an input contact located on the top surface and configured to connect to the input tab, a resistor element located on the top surface and connected to the input contact, and a ground contact located on the top surface and connected to the resistor element. The integrated spring mounted chip termination also includes a formed ground spring connected to the ground contact of the chip termination, the formed ground spring configured to attach the chip termination to the heatsink, such that the chip termination and the heatsink are in contact.

A high-frequency terminator includes a dielectric substrate, a metal layer provided on a back surface of the dielectric substrate, a transmission line provided on a front surface of the dielectric substrate, a resistor provided on the front surface of the dielectric substrate and connected to the transmission line, and a conductor electrically connecting the resistor and the metal layer. The dielectric substrate includes a first substrate part having a first thickness in a direction from the back surface toward the front surface, and a second substrate part having a second thickness in the direction that is less than the first thickness. The transmission line extends from the first substrate part to the second substrate part and is connected to the resistor on the second substrate part. The conductor electrically connects the metal layer and the resistor at the second substrate part.

A high-frequency terminator includes a dielectric substrate, a metal layer provided on a back surface of the dielectric substrate, a transmission line provided on a front surface of the dielectric substrate, a resistor provided on the front surface of the dielectric substrate and connected to the transmission line, and a conductor electrically connecting the resistor and the metal layer. The dielectric substrate includes a first substrate part having a first thickness in a direction from the back surface toward the front surface, and a second substrate part having a second thickness in the direction that is less than the first thickness. The transmission line extends from the first substrate part to the second substrate part and is connected to the resistor on the second substrate part. The conductor electrically connects the metal layer and the resistor at the second substrate part.

A dummy load for high power and high bandwidth, the dummy load comprising a base plate, a resistive termination acting as a resistive load for dissipating radio frequency power at low frequencies, and at least one coaxial cable acting as a cable load for dissipating radio frequency power at high frequencies, the at least one coaxial cable being connected to the resistive termination. At least one of the resistive termination and the at least one coaxial cable is positioned on the base plate. The at least one coaxial cable has a cross section that varies over the length of the coaxial cable.