Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

Apparatus and methods related to ferrite based circulators are disclosed. A ferrite disk used in a circulator can be configured to reduce intermodulation distortion when routing radio-frequency signals having closely spaced frequencies. Such a reduction in intermodulation distortion can be achieved by adjusting magnetization at the edge portion of the ferrite disk. By way of an example, a ferrite disk with a reduced saturation magnetization (4PiMs) edge portion can reduce intermodulation distortion. Example configurations with such a reduced 4PiMs edge portions are disclosed.

Apparatus and methods related to ferrite based circulators are disclosed. A ferrite disk used in a circulator can be configured to reduce intermodulation distortion when routing radio-frequency signals having closely spaced frequencies. Such a reduction in intermodulation distortion can be achieved by adjusting magnetization at the edge portion of the ferrite disk. By way of an example, a ferrite disk with a reduced saturation magnetization (4PiMs) edge portion can reduce intermodulation distortion. Example configurations with such a reduced 4PiMs edge portions are disclosed.

Systems and methods for ferrite redundancy switch networks are disclosed. In one embodiment, a redundant ferrite switch system comprises: a first plurality of circulator modules, a second plurality of circulator modules, and a plurality of components coupled to the first plurality of circulator modules and coupled to the second plurality of circulator modules, wherein the first plurality of circulator modules and the second plurality of circulator modules is able to route a path through the redundant ferrite switch system when more than two components in the plurality of components have failed. The first plurality of circulator modules and the second plurality of circulator modules each comprise, respectively: a plurality of inputs; a plurality of outputs; and a plurality of circulators connecting the plurality of inputs to the plurality of outputs.

Systems and methods for ferrite redundancy switch networks are disclosed. In one embodiment, a redundant ferrite switch system comprises: a first plurality of circulator modules, a second plurality of circulator modules, and a plurality of components coupled to the first plurality of circulator modules and coupled to the second plurality of circulator modules, wherein the first plurality of circulator modules and the second plurality of circulator modules is able to route a path through the redundant ferrite switch system when more than two components in the plurality of components have failed. The first plurality of circulator modules and the second plurality of circulator modules each comprise, respectively: a plurality of inputs; a plurality of outputs; and a plurality of circulators connecting the plurality of inputs to the plurality of outputs.

An excessive voltage rise of load voltage, caused by an impedance mismatching on a transmission path, is prevented, and high-frequency power is regenerated. A parallel impedance is connected to the transmission path during the voltage rise, thereby regenerating voltage caused by a standing wave and preventing excessive load voltage, together with enhancing energy usage efficiency. Establishing the parallel impedance for the load impedance, on the transmission path between the high-frequency amplifier circuit of the high-frequency power supply device and the high-frequency load, reduces impedance at the connecting position to prevent generation of excessive voltage on the transmission path, and high-frequency power is regenerated from the transmission path by the parallel impedance.

An excessive voltage rise of load voltage, caused by an impedance mismatching on a transmission path, is prevented, and high-frequency power is regenerated. A parallel impedance is connected to the transmission path during the voltage rise, thereby regenerating voltage caused by a standing wave and preventing excessive load voltage, together with enhancing energy usage efficiency. Establishing the parallel impedance for the load impedance, on the transmission path between the high-frequency amplifier circuit of the high-frequency power supply device and the high-frequency load, reduces impedance at the connecting position to prevent generation of excessive voltage on the transmission path, and high-frequency power is regenerated from the transmission path by the parallel impedance.

A compensation circuit in a MIMO system includes a phase shifting circuit and an attenuation circuit. The phase shifting circuit includes a plurality of phase shifters coupled in parallel which apply compensation to signals. The attenuation circuit includes a plurality of attenuators coupled in parallel to apply compensation to signals.

A passive radiofrequency microelectronic components for an integrated circuit which includes a dielectric substrate and at least one metal conductive layer positioned on said substrate. The conductive layer including at least one first metal conductive portion and a second metal conductive portion separated by an insulation. A microelectronic component according to the invention includes at least one graphene layer positioned so that a radiofrequency or hyperfrequency signal crosses said at least one graphene layer when it is transmitted between said first metal conductive portion and said second metal conductive portion, said graphene layer being able, when it is subject to an electric potential, to transmit said radiofrequency or hyperfrequency signal along a first direction and to attenuate said radiofrequency or hyperfrequency signal along a second direction opposite to said first direction.

A passive radiofrequency microelectronic components for an integrated circuit which includes a dielectric substrate and at least one metal conductive layer positioned on said substrate. The conductive layer including at least one first metal conductive portion and a second metal conductive portion separated by an insulation. A microelectronic component according to the invention includes at least one graphene layer positioned so that a radiofrequency or hyperfrequency signal crosses said at least one graphene layer when it is transmitted between said first metal conductive portion and said second metal conductive portion, said graphene layer being able, when it is subject to an electric potential, to transmit said radiofrequency or hyperfrequency signal along a first direction and to attenuate said radiofrequency or hyperfrequency signal along a second direction opposite to said first direction.