A phased circular array of antennas each having an omnidirectional radiation pattern are disposed on an outside surface of a planar sheet conformed to the shape of a cylinder. A plurality of coplanar waveguides includes a ground line and a signal line feeding the antennas is disposed on the outside surface of the cylinder. A signal-carrying feed network electromagnetically coupled to the coplanar waveguides is disposed on an inside surface of the cylinder which does not interfere with radiation from the antennas. An electrical ground is disposed on the outside surface of the cylinder which is connected to the ground feed of each of the coplanar waveguides and serves as a ground plane for the signal-carrying feed network. The array is configured to provide 360° beam steering around the vertical axis of the cylinder. A method of fabrication is disclosed.

A packaging structure, a method of manufacturing a packaging structure, and a quantum processor include a substrate; a coplanar waveguide including a first ground wire, a second ground wire, and a signal wire, wherein the first ground wire, the second ground wire, and the signal wire are disposed on a surface of the substrate at intervals, and the signal wire is located between the first ground wire and the second ground wire; an air bridge including a first end connected with the first ground wire and a second end connected with the second ground wire, wherein a gap exists between the air bridge and a surface of the signal wire away from the substrate; and a compensation structure located on the surface of the substrate.

A stacked, multi-layer transmission line is provided. The stacked transmission line includes at least a pair of conductive traces, each conductive trace having a plurality of conductive stubs electrically coupled thereto. The stubs are disposed in one or more separate spatial layers from the conductive traces.

Methods and apparatus for a self-supported stripline structure including a center conductor having stubs. Opposing first and second ground planes form a cavity in which the center conductor is located. Opposing first and second lateral structures enclose the cavity sides. A first one of the stubs is connected to the first lateral structure to fix the center conductor in position within the cavity.

A transformer balun fabricated in silicon and including a series of alternating metal layers and dielectric layers that define first and second outer conductors that are part of a coaxial structure. Each dielectric layer includes a plurality of conductive vias extending through the dielectric layer to provide electrical contact between opposing metal layers, where a top metal layer forms a top wall of each outer conductor and a bottom metal layer forms a bottom wall of each outer conductor and the other metal layers and the dielectric layers define sidewalls of the outer conductors. Inner conductors extends down both of the first and second outer conductors and a first output line is electrically coupled to a sidewall of the first outer conductor and a second output line is electrically coupled to a sidewall of the second outer conductor.

Described is a method for forming a planar transmission line low-pass filter and a resulting filter. The method comprises several acts, including using lithographic processes and a castable polymer with absorptive matrix as a spin-on dielectric to form the planar transmission line low-pass filter.

This feeder line includes: a plate-shaped dielectric substrate; a first conductor pattern dividing a first surface of the dielectric substrate into a first area and a second area; a first-area ground conductor pattern formed in the first area; a second-area ground conductor pattern formed in the second area; a second-surface ground conductor pattern formed on a second surface; a second conductor pattern connecting the first conductor pattern and one or both of the first-area ground conductor pattern and the second-area ground conductor pattern; a plurality of conductors and connecting between the second-surface ground conductor pattern, and the first-area ground conductor pattern and the second-area ground conductor pattern; and a conductive member connecting the first-area ground conductor pattern and the second-area ground conductor pattern. A length of the second conductor pattern is an odd multiple of ¼ of a wavelength of a signal propagating through the first conductor pattern.

The present invention relates to articles comprising core shell liquid metal encapsulate networks and methods of using core shell liquid metal encapsulate networks to control AC signals and power. Such method permits the skilled artisan to control the radiation, transmission, reflection and modulation of an AC signal and power. As a result, AC system properties such as operation frequency, polarization, gain, directionality, insertion loss, return loss, and impedance can be controlled under strain.

The present invention relates to a structure having a nanoantenna, a method for manufacturing same, a drug delivery body having the same, a thermotherapy complex, a drug therapy device, and a thermotherapy device. The structure of the present invention has a nanoantenna pattern formed on the outer surface of a porous micro-container, thereby enabling wireless control from the outside, and when the structure is used as a drug delivery system and a thermotherapy complex, drug therapy and thermotherapy can be carried out at a desired application region inside a living body at a desired time. Also, the structure of the present invention enables transmission and reception of a wireless signal with an external controller through the nanoantenna, thereby enabling the detection of a signal inside the living body and the transmission of the signal to the external controller, and the discharge of a drug or nanowires according to a response signal transmitted from the external controller.

A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material surrounds the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material is separated from the first transmission line and the second transmission line.