A device has a laser unit, which includes: a top-side p-type DBR region; which is on top of and in direct touch with an active region; which is on top of and in direct touch with a bottom-side n-type Distributed Bragg Reflector (DBR) region; which is on top of a n-type substrate. The laser unit further includes a voltage measurement anode touching or being in proximity to a top surface of the active region; and a voltage measurement cathode touching or being in proximity to a bottom surface of the active region. The voltage between the voltage measurement anode and the voltage measurement cathode is directly measured; and is utilized for determining characteristics of a laser self-mix signal of the laser unit, without having or using a monitor photo-diode.

An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.

An electro-optic (EO) sensor and a method for detecting a local electric field strength, the EO sensor including: a first optical cavity; a gain medium within the first optical cavity; a mode locking element within the first optical cavity; and an EO material within the first optical cavity, an effective optical path length of the EO material being variable depending on the local electric field strength at the EO sensor, wherein the gain medium, the mode locking element, and the EO material are arranged in a common path of light within the first optical cavity, and wherein during operation, the EO sensor emits pulses of light at a repetition rate characteristic of an effective optical path length of the light within the first optical cavity, the effective optical path length varying depending on the electric field strength local to the EO sensor.

Disclosed is an optical sensor, including an external cavity laser configured to output sensing light and reference light; and a photodetector configured to detect a beating signal by an interference of the sensing light and the reference light output from the external cavity laser, in which the external cavity laser includes a reflecting filter including a sensing grating, to which a sensing object is attachable, and a reference grating, which is disposed on the same plane as that of the sensing grating, and outputs sensing light reflected from the sensing grating and reference light reflected from the reference grating. Accordingly, the optical sensor does not require a high-resolution spectroscope and has improved resolution and sensitivity.

A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.

A method reduces false-positive particle counts detected by an interference particle sensor module, which has a laser and a light detector. The method including: emitting laser light; providing a high-frequency signal during the emission of the laser light, a modulation frequency of the high-frequency signal being between 10-500 MHz; detecting an optical response by the light detector in reaction to the emitted laser light while providing the high-frequency signal, which is arranged such that a detection signal caused by a macroscopic object positioned between a first and second distance is reduced in comparison to a detection signal caused by the macroscopic object at the same position without providing the high-frequency signal. The high-frequency signal is provided to a tuning structure of the particle sensor module which is arranged to modify a resonance frequency of an optical resonator comprised by the laser sensor module upon reception of the high-frequency signal.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.