A method of fabricating a surface-emitting laser includes the steps of fabricating a substrate product including device sections, a pad electrode, and a conductor, each of the device sections including a surface-emitting laser having an electrode, the conductor connecting the pad electrode to the electrode across a boundary of the device sections; attaching a connection device to the substrate product, the connection device including a probe device having a probe and a probe support base having an opening; performing a burn-in test of the surface-emitting lasers by applying electric power to the pad electrode through the probe at a high temperature; and after the burn-in test, separating the substrate product into semiconductor chips. The burn-in test includes a step of monitoring light emitted by the surface-emitting laser through the opening during the burn-in test, and a step of selecting the surface-emitting lasers based on a monitoring result.

A method of producing a semiconductor laser device includes the steps of preparing first and second substrate products each of which includes a substrate and a stacked semiconductor layer formed on the substrate, the first and second substrate products being different from each other; etching the first substrate product with a chlorine-based gas in a vacuum chamber by using a dry etching method; evacuating the vacuum chamber while monitoring a partial pressure of hydrogen chloride in the vacuum chamber so as to obtain the partial pressure of the hydrogen chloride within a predetermined range; after evacuating the vacuum chamber, introducing the second substrate product into the vacuum chamber while maintaining a vacuum state inside the vacuum chamber; and etching the second substrate product with a chlorine-based gas in the vacuum chamber by using the dry etching method.

Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

A method of fabricating a semiconductor optical device includes the steps of preparing a substrate product including a first side and a second side opposite to the first side, the first side including device sections and a street region extending between the device sections; forming a mask on the first side, the mask including device covering portions covering the respective device sections and an opening defining the device covering portions, the opening being provided in the street region; etching the substrate product using the mask so as to form a groove in the street region, the groove defining the device sections; after removing the mask, securing the first side to a support member; and forming an array of semiconductor chips on the support member by removing part of the substrate product from the second side until the groove is exposed so as to separate the device sections from each other.

A method of fabricating a surface-emitting laser includes the steps of preparing an epitaxial substrate that includes an active layer and an upper stacked semiconductor layer provided on the active layer, the upper stacked semiconductor layer including a structure for forming an upper distributed Bragg reflector; forming a mask for forming a semiconductor post on the epitaxial substrate; and etching the epitaxial substrate by dry etching using the mask. The step of etching the epitaxial substrate includes the steps of measuring photoluminescence from the epitaxial substrate in response to excitation light during the etching so as to monitor an end point of the dry etching in accordance with a result of the measuring; and ending the dry etching in response to detection of the end point.

The invention describes a light emitting device (100). The light emitting device (100) comprises at least one light emitting structure (110), at least one processing layer (120) and at least one optical structure (130). The optical structure (130) comprises at least one material processed by means of processing light (150). The at least one processing layer (120) is arranged to reduce reflection of the processing light (150) in a direction of the optical structure (130) at least by 50%, preferably at least by 80%, more preferably at least by 95% and most preferably at least by 99% during processing of the material by means of the processing light (150). It is a basic idea of the present invention to incorporate a non- or low-reflective processing layer (120) on top of a light emitting structure (110) like a VCSEL array in order to enable on wafer processing of light emitting structures (130) like microlens arrays. The invention further describes a method of manufacturing such a light emitting device (100).

An array device manufacturing method includes the steps of forming a plurality of optical elements on a wafer; inspecting the plurality of optical elements; defining dicing lines on the basis of a result of the inspection such that an array device composed entirely of one or more non-defective ones of the plurality of optical elements is obtained, the one or more non-defective ones being determined to be non-defective in the inspection; and forming the array device by dicing the wafer along the dicing lines.

An optical package having a patterned submount, an optoelectronic device mounted to the patterned submount, a spacer affixed on one side to the patterned submount, the spacer having a bore hole therethrough wherein the optoelectronic device is positioned, and an optical element affixed to the spacer on a side opposite the patterned submount and covering the spacer bore hole. The patterned submount may be a circuit board. The optoelectronic device may be a VCSEL. The spacer may be affixed to the circuit board, for example, using an epoxy preform or an adhesive laminate. The spacer may, for example, be manufactured from a sheet of stainless steel or from a circuit board. The optical element may be, for example, a diffuser, a concave lens, a convex lens, a holographic element, polarizers, or diffraction gratings. The optical element may be affixed to the spacer using an epoxy preform or an adhesive laminate.

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.