An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A laser processing apparatus includes a semiconductor laser element, a waveform output unit for outputting input waveform data, a driver circuit for supplying a drive current having a time waveform according to the input waveform data to the semiconductor laser element, and a processing optical system for irradiating a processing object with laser light. The semiconductor laser element outputs the laser light in which two or more light pulse groups each including one or a plurality of light pulses are provided with a time interval therebetween. Time waveforms of at least two light pulse are different from each other. The time waveform includes at least one of a time waveform of each of the one or plurality of light pulses, a time width of each of the one or plurality of light pulses, and a time interval of the plurality of light pulses.

A narrow linewidth mid infrared laser, including a pumping laser diode with a fast-axis compressor and a pumping wavelength λ.sub.o; and an optical resonator arranged to receive the pumping wavelength λ.sub.o, the optical resonator including a laser crystal with a lasing wavelength λ.sub.p, a dichroic mirror, and a nonlinear crystal to generate an idler wavelength λ.sub.i.

A laser source assembly is based upon an optical reference substrate that is utilized as a common optical reference plane upon which both a fiber array and a laser diode array are disposed and positioned to provide alignment between the components. Passive optical components used to provide alignment between the laser diode array and the fiber array are also located on the optical reference substrate. A top surface of the reference substrate is patterned to include alignment fiducials and bond locations for the fiber array receiving block, laser diode array submount and passive optical components. The receiving block is configured to present the optical fibers at a height that facilitates alignment with the output beams from the laser diodes positioned on the silicon submount.

Described herein are photonic sources and related system architectures that can satisfy the optical power requirements of large photonic accelerators. Some embodiments relate to a computer comprising a photonic accelerator configured to perform matrix multiplication; a fiber array optically coupled to the photonic accelerator; and a photonic source optically coupled to the fiber array. The photonic source comprising a laser array comprising a plurality of monolithically co-integrated lasers, and a coupling lens array comprising a plurality of monolithically co-integrated lenses, the coupling lens array optically coupling the laser array to the fiber array. The laser array is configured to output between 0.1 W and 10 W of optical power.

This application provides an optical module, and relates to the field of optical communication. An optical module provided in the embodiments of this application includes a laser box and a silicon photonic chip that are enclosed and packaged by an upper enclosure part and a lower enclosure part. The laser box is disposed on and is in contact with the surface of the silicon photonic chip by the side wall or the base. The laser chip is disposed on the top plane of the laser box. The top plane is in contact with the upper enclosure part for heat dissipation, so as to help heat generated by the laser chip be conducted to the upper enclosure part via the top plane, so that the heat generated by the laser chip is dissipated not via the silicon photonic chip.

Provided is an optical isolator including a semiconductor substrate, an optical attenuator and an optical amplifier aligned with each other on the semiconductor substrate, an input optical waveguide connected to the optical attenuator, and an output optical waveguide connected to the optical amplifier, wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing, wherein a first input light incident on the optical attenuator through the input optical waveguide is output as a first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as a second output light through the input optical waveguide, and wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.

A quantum cascade laser device includes a QCL element and a package. A light-emitting window through which laser light emitted from the QCL element passes is provided on a side wall of the package. The light-emitting window includes a small-diameter hole, a large-diameter hole larger than the small-diameter hole, a counterbore surface having an annular shape that connects the small-diameter hole and the large-diameter hole, and a window member disposed inside the large-diameter hole. An incident surface of a window member includes a first region in which an anti-reflection film is provided, and a second region metallized and formed in an annular shape to be separated from the first region and to surround the first region. The second region is joined to the counterbore surface through a solder member.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.

A method of generating an optical pulse train using spectral extension by optical phase modulation, spectral narrowing by optical phase demodulation, and narrow linewidth optical filtering is disclosed. It is also described that the wavelength selection of light using a chromatic dispersion element between the optical phase modulator can enrich the method. Systems include an in-line optical setup and a ring-type laser cavity for mode-locked laser outputs. The duration with which the electrical signals driving the modulators are opposed determines the line width of the optical pulses, and the opposite repetition of the electrical signals defines the rate of repetition of an optical pulse train generated. Four different arrangements of electrical signals in the time domain or phase domain make it possible to control the generation of optical pulses and the wavelength selection of the light. (i) A signal arrangement comprising sinusoidal electrical signals with a slight frequency difference. (ii) A signal arrangement comprising a phase-shift between electrical signals. (iii) A signal arrangement comprising a phase-shift between electrical signals depending on the amplitude of the bits. (iv) A signal arrangement comprising random electric waves that repeat themselves over a predefined period to allow the insertion of controllable time delays between each other.