A sensor system includes an optical aperture, a light source configured to generate a light pulse along a first optical path, a reflective surface configured to reflect the light pulse from the first optical path to a second optical path for passing through the optical aperture, a beam steering device positioned in the optical aperture and configured to steer the light pulse along different directions to one or more objects in an angle of view of the sensor system, a detector configured to receive a reflected light pulse and convert the reflected light pulse into an electrical signal, the reflected light pulse being reflected back from the one or more objects and passed through the beam steer device, and a spatial filtering device positioned between the beam steering device and the detector to block undesirable light in both the light pulse and the reflected light pulse.

A light source package includes: a substrate; a first light source device disposed on the substrate, and configured to emit a light of a first wavelength; a second light source device disposed to be spaced apart from the first light source on the substrate, and configured to emit a light of a second wavelength, different from the first wavelength; and a light transmissive structure disposed above first and second light source devices, and including at least one first lens configured to increase a beam angle of the light of the first wavelength and at least one second lens configured to reduce a beam angle of the light of the second wavelength.

In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 μm. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet.

A laser chip includes a first power detector, a first controller, an optical splitter, a polarization splitter-rotator, a bandpass filter, and a slave laser. The optical splitter includes a first, a second, and a third port. The first port is configured to receive injection light of a master laser. The second port is connected to the first power detector. The optical splitter is configured such that the injection light enters the optical splitter through the first port, and is output to the polarization splitter-rotator through the third port. The polarization splitter-rotator is configured to perform optical splitting and polarization conversion on the injection light. The polarization splitter-rotator includes a first waveguide configured to transmit TE mode injection light after the injection light is split by the polarization splitter-rotator, and a second waveguide configured to transmit TM mode injection light after the injection light is split by the polarization splitter-rotator.

A radiation-emitting semiconductor arrangement includes at least one semiconductor body having an active region that generates a primary radiation, and includes a radiation conversion element, wherein the radiation conversion element converts the primary radiation at least partially into a secondary radiation during operation of the semiconductor arrangement, the radiation conversion element emits the secondary radiation at a narrow angle, the radiation conversion element emits the secondary radiation into a projected spatial angle of not more than π/5, and the semiconductor arrangement includes an optical deflector movable during operation of the semiconductor arrangement.

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed.

A light source package includes: a substrate; a first light source device disposed on the substrate, and configured to emit a light of a first wavelength; a second light source device disposed to be spaced apart from the first light source on the substrate, and configured to emit a light of a second wavelength, different from the first wavelength; and a light transmissive structure disposed above first and second light source devices, and including at least one first lens configured to increase a beam angle of the light of the first wavelength and at least one second lens configured to reduce a beam angle of the light of the second wavelength.

A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet.

An optical module includes a light-forming part configured to form light; and a protective member that includes an output window configured to transmit light from the light-forming part and that is disposed so as to surround the light-forming part. The light-forming part includes a base member; a plurality of semiconductor light-emitting devices mounted on the base member and configured to emit light differing from each other in wavelength; and a filter mounted on the base member and configured to directly receive and coaxially multiplex diverging light from the plurality of semiconductor light-emitting devices.