A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

Various Reservoir Computing systems and a method performed by a Reservoir Computing system are provided. A Reservoir Computing system includes a laser for emitting light. The Reservoir Computing system further includes a mirror for reflecting external feedback light back to the laser. The Reservoir Computing system also includes a modulator for modulating the external feedback light reflected back to the laser. The Reservoir Computing system additionally includes a photo-detector for converting a laser output signal to an electrical signal. The Reservoir Computing system further includes an analog-to-digital converter for sampling the electrical signal. The Reservoir Computing system also includes a controller for applying a learning algorithm to the sampled electrical signal.

The present invention relates to telecommunication techniques and integrated circuit (IC) devices. More specifically, embodiments of the present invention provide an off-quadrature modulation system. Once an off-quadrature modulation position is determined, a ratio between DC power transfer amplitude and dither tone amplitude for a modulator is as a control loop target to stabilize off-quadrature modulation. DC power transfer amplitude is obtained by measuring and sampling the output of an optical modulator. Dither tone amplitude is obtained by measuring and sampling the modulator output and performing calculation using the optical modulator output values and corresponding dither tone values. There are other embodiments as well.

Provided in a method of fabricating an optical element array including providing a silicon substrate, providing a first element layer on the silicon substrate, the first element layer including a plurality of passive optical elements, providing a plurality of semiconductor blocks on a compound semiconductor wafer, providing semiconductor dies by dicing the compound semiconductor wafer by the plurality of semiconductor blocks, and providing a second element layer by providing the semiconductor dies on the first element layer, each of the plurality of semiconductor blocks contacting at least one corresponding passive optical element from among the plurality of passive optical elements.

In an embodiment, a laser includes a gain section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

An optical transmitter includes: a set of reflective semiconductor optical amplifiers (RSOAs) or other reflective gain media, a set of ring filters, a set of intermediate waveguides, a shared waveguide, a shared loop mirror, and an output waveguide. Each intermediate waveguide channels light from an RSOA in proximity to an associated ring filter to cause optically coupled light to circulate in the associated ring filter. The shared waveguide is coupled to the shared loop mirror, and is located in proximity to the set of ring filters, so that light circulating in each ring filter causes optically coupled light to flow in the shared waveguide. Each RSOA forms a lasing cavity with the shared loop reflector, wherein each lasing cavity has a different wavelength associated with a resonance of its associated ring filter. The output waveguide is optically coupled to the shared loop mirror and includes an electro-optical modulator.

According to various embodiments, there is provided an optical device including a first waveguide configured to guide a light wave along a longitudinal axis; a first grating at least partially formed in the first waveguide, the first grating arranged away from the longitudinal axis in a first direction; and a second grating at least partially formed in the first waveguide, the second grating arranged away from the longitudinal axis in a second direction; wherein the second direction is different from the first direction.