An optoelectronic component and a method for manufacturing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a diffractive optical element comprising at least one conversion material and a light source configured to emit primary radiation, wherein the conversion material is encapsulated in the diffractive optical element, and wherein the conversion material is arranged in a beam path of the primary radiation and is configured to convert the primary radiation at least partially into secondary radiation.

A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light conversion device is provided that includes a main body and a light conversion arrangement. The main body includes heatsink and is on a back side of the light conversion arrangement. The light conversion arrangement has a front side with light conversion elements separated from one another at least regionally by a trench. The light conversion elements, when irradiated with primary light on the front side, are configured to emit secondary light having a different wavelength from the front side.

A light emitting device includes: a base; a first semiconductor laser element disposed on an upper surface of the base and configured to emit first light; a first light reflecting member disposed on the upper surface of the base, the first light reflecting member having a first light reflecting face including a plane configured to reflect the first light; a second semiconductor laser element disposed on an upper surface of the base and configured to emit second light; a second light reflecting member disposed on the upper surface of the base, the second light reflecting member having a second light reflecting face including a plane configured to reflect the second light; and a phosphor member onto which the first light reflected from the first light reflecting member and the second light reflected from the second light reflecting member are irradiated.

An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

The invention provides a luminescent element (1000) comprising a solid luminescent body (100), wherein the solid luminescent body (100) comprises a luminescent material (200), wherein the luminescent material (200) is configured to generate luminescent material light (201) upon excitation with light having a wavelength where the luminescent material (200) is excitable, wherein the solid luminescent body (100) comprises luminescent body faces (120), wherein the luminescent element (1000) further comprises one or more reflective elements (300) associated to at least one luminescent body face (120), wherein the one or more reflective elements (300) are metallic, and wherein a surface coverage of the at least one luminescent body face (120) with the one or more reflective elements (300) is selected from the range of 5-40%.

A laser-excited-phosphor light-source system in which a phosphor plate remains stationary while a laser beam is made to scan across the phosphor plate. In some embodiments, the phosphor-plate assembly includes a plurality of areas each having a different phosphor substance that emits wavelength-converted light in response to excitation from the scanned laser beam and/or a diffusive material. In some embodiments, one or more rotating prisms and/or one or more rotating or oscillating or angularly displaced mirrors are used to deflect the input laser light on the way toward the phosphor plate and to deflect the wavelength-converted and/or diffused light in the opposite direction such that the output beam of wavelength-converted and/or diffused light remains stationary with respect to the phosphor plate as the input laser beam is moved across the surface of the phosphor-plate assembly.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.