A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.

Disclosed here are methods, devices, and systems for generating an output light beam for a pulsed laser. An example method may comprise generating one or more pump optical beams comprising at least two photons having a pump wavelength. A first nonlinear stage may convert the at least two photons to a first photon having a first wavelength that is half of the pump wavelength. The first optical beam may be caused to spatially overlap with a seed optical beam. At least two second nonlinear stages separated by a gap may be used to convert, based on the seed optical beam, the first photon to a second photon having a second wavelength and a third photon having a target wavelength greater than the pump wavelength. A third nonlinear stage may convert the second photon to a fourth photon and a fifth photon each having the target wavelength or having a wavelength within an offset range of the target wavelength.

The present invention describes a laser system for eliminating astigmatism to produce an elliptical laser beam that has an ellipticity between about 0.9 to 1.0. The laser system described herein allows for increased conversion efficiency and output powers. on-linear optical elements in the laser system eliminate astigmatism. The laser system comprises one or more cavities with wavelength splitters that act as dual-minor chambers for single-pass light transmission through the non-linear optical elements to reduce cavity size or as beam splitters for double-pass light transmission through the non-linear optical elements to increase laser output power. The laser system may also include a birefringent filter and/or etalon in the first cavity for polarization and wavelength tuning. The laser system may also generate a high-power, deep-ultraviolet laser output. The laser system may also be devoid of curved mirrors and non-normal incidence reflection to eliminate astigmatism.

A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.

A method of manufacturing a wavelength conversion member includes: preparing a composite by layering a layered body and a ceramic sheet that includes a phosphor, the layered body including a pair of light-reflective green sheets each containing a reflective material, and a light-shielding green sheet containing a light shielding material with the light-shielding green sheet being layered between the pair of reflective green sheets; and pressurizing and firing the composite.

A wavelength conversion member includes: a phosphor; a metal joining layer provided on a bottom surface and a side surface of the phosphor; a metal heat-dissipating holding unit including a recess that covers the bottom surface and at least a portion of the side surface of the phosphor and that accommodates the phosphor so that the phosphor is embedded in the recess; and a metal porous joining material provided between the metal joining layer and the metal heat-dissipating holding unit.

A light pulse source and method for generating repetitive optical pulses are described. The light pulse source includes a continuous wave cw laser device, an optical waveguide optically coupled with the laser device, an optical microresonator, and a tuning device. The optical microresonator coupling cw laser light via the waveguide into the microresonator, which, may include, a light field in a soliton state with soliton shaped pulses coupled out of the microresonator for providing the repetitive optical pulses. The laser device includes a chip based semiconductor laser, the microresonator and/or the waveguide may reflect an optical feedback portion of light back to the semiconductor laser, which may provide self-injection locking relative to a resonance frequency of the microresonator. The tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the microresonator may provide the soliton state.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.

A wavelength conversion member includes a substrate, a dichroic mirror layer, an SiO.sub.2 layer, a ZnO layer, and a phosphor layer, which are sequentially stacked from the substrate. The dichroic mirror layer reflects at least part of light incident from the above. The phosphor layer includes a plurality of phosphors and ZnO between the phosphors.