A laser-diode device includes a substrate; at least one first cladding layer placed on the substrate; an active layer placed on the first cladding layer and arranged to emit a radiation; at least one second cladding layer placed on the active layer, said cladding layers being adapted to form a heterojunction; a first terminal facet and a second terminal facet placed transversally relative to the cladding layers and to the active layer; a periodic structure, placed in proximity to the second terminal facet and within the second cladding layer, and belonging to an optical cavity, wherein the first terminal facet represents the output mirror from which the radiation generated by the active layer exits, and the second terminal facet, integrated by the periodic structure, represents a second mirror having high reflectivity, so that the radiation produced by the active layer exits almost totally through the first mirror.

A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.

A light-emitting element mounting substrate includes a substrate including an insulating resin material, a first conductor layer formed on a first main surface of the substrate, a second conductor layer formed on a second main surface of the substrate on the opposite side to the first main surface, metal blocks positioned such that the metal blocks are penetrating through the first conductor layer, substrate and second conductor layer, and through hole conductors formed to extend adjacent to the metal blocks respectively such that the through hole conductors electrically connect the first conductor layer and the second conductor layer. The first conductor layer has an element mounting portion formed such that a light-emitting element is mounted to a first conductor layer side on the element mounting portion, and the metal blocks are positioned such that the metal blocks have end portions in the element mounting portion of the first conductor layer.

A method for fabricating a surface emitting laser includes the steps of: preparing a processing apparatus with a first part and a second part, the processing apparatus including a first heater and a second heater that heat the first part and the second part, respectively; preparing a wafer product for forming a surface emitting laser, the wafer product including a semiconductor post including a III-V compound semiconductor layer containing aluminum as a constituent element, the III-V compound semiconductor layer being exposed at a side face of the semiconductor post; after disposing the wafer product in the second part, energizing the first heater and the second heater; supplying a first gas containing no oxidizing agent to the processing apparatus; and after stopping supplying the first gas, oxidizing the III-V compound semiconductor layer by supplying a second gas containing an oxidizing agent to the processing apparatus.

A laser diode package includes a heat pipe having a fluid chamber enclosed in part by a heat exchange wall for containing a fluid. Wicking channels in the fluid chamber is adapted to wick a liquid phase of the fluid from a condensing section of the heat pipe to an evaporating section of the heat exchanger, and a laser diode is connected to the heat exchange wall at the evaporating section of the heat exchanger so that heat produced by the laser diode is removed isothermally from the evaporating section to the condensing section by a liquid-to-vapor phase change of the fluid.

A crystal substrate is composed of a crystal of a nitride of a group 13 element and has a first main face and a second main face. The crystal substrate includes a low carrier concentration region and a high carrier concentration region both extending between the first main face and second main face. The low carrier concentration region has a carrier concentration of 10.sup.18/cm.sup.3 or lower and a defect density of 10.sup.7/cm.sup.2 or lower. The high carrier concentration region has a carrier concentration of 10.sup.19/cm.sup.3 or higher and a defect density of 10.sup.8/cm.sup.2 or higher.

In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

An optical module (200) comprises an emitter (214) configured to emit electromagnetic radiation and a first substrate (212) configured to support the emitter (214). The optical module (200) further comprises a driver (220) configured to control the emitter (214) and a second substrate (216) configured to support the driver (220). The first substrate (212) has a greater thermal conductivity than the second substrate (216).

A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

A mode-locked solid state laser apparatus including an optical film, a gain medium crystal, a Fabry-Perot element, a first mirror, a second mirror, a third mirror and an output coupler is disclosed. The optical film is configured to receive a pumping light having a first wavelength incident in a first direction. The gain medium crystal receives the pumping light passing the optical film, and generates an initial laser beam having a second wavelength, wherein the initial laser beam forms a first optical path starting at one end thereof from the gain medium crystal. The Fabry-Perot element is disposed on the other end of the first optical path opposite to the one end, and reflects the initial laser beam along a second optical path having one end thereof starting from the Fabry-Perot element. The first mirror is disposed on the other end of the second optical path opposite to the one end of the second optical path, and reflects the initial laser beam along a third optical path having one end thereof starting from the first mirror.