Embodiments of the present disclosure disclose an optoelectronic oscillator including an optical chip and a microwave chip. The optical chip is implemented by fabricating different optoelectronic devices on an integrated optical substrate, comprising: a laser assembly; a mode selection device coupled to the laser assembly, and configured to receive the laser and perform mode selection; an optical delay module coupled to the mode selection device; and a detector coupled to the optical delay module. The microwave chip is a microwave integrated circuit formed by fabricating microwave elements on a semiconductor substrate, comprising: a microwave processing circuit configured to receive microwave signal and perform signal processing; a coupler coupled to the microwave processing circuit, and configured to provide a part of the microwave signal to a phase shifter and output the other part thereof; and a phase shifter configured to feed the phase-shifted microwave signal to the laser assembly.

A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10-10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.

A semiconductor laser element configured to emit laser light, the semiconductor laser element comprises a substrate; and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a waveguide extending in a predetermined direction and configured to emit the laser light from one end face of the waveguide, the substrate includes a plurality of cavity sections intersecting the predetermined direction and extending, the plurality of cavity sections are provided in the substrate such that at least parts of at least two cavity sections of the plurality of cavity sections overlap with each other along the predetermined direction, and a length of each of the plurality of cavity sections in a direction perpendicular to the predetermined direction is shorter than a length of the semiconductor laser element in the perpendicular direction.

Methods for fabricating ultraviolet laser diode devices include providing substrate members comprising gallium and nitrogen or aluminum and nitrogen, forming an epitaxial material overlying a surface region of the substrate members, patterning the epitaxial material to form epitaxial mesa regions, depositing a bond media on at least one of the epitaxial mesa regions, bonding the bond media on at least one of the epitaxial mesa regions to a handle substrate, subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate, and processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device.

An electrically injected vertical-cavity surface emitting laser (VCSEL) and a method of manufacturing the same is disclosed. The electrically injected VCSEL includes a non-c-plane substrate and a nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate.

A semiconductor laser element includes: an n-type cladding layer disposed above an n-type semiconductor substrate (a chip-like substrate); an active layer disposed above the n-type cladding layer; and a p-type cladding layer disposed above the active layer, in which the active layer includes a well layer and a barrier layer, an energy band gap of the barrier layer is larger than an energy band gap of the n-type cladding layer, and a refractive index of the barrier layer is higher than a refractive index of the n-type cladding layer.

A surface emitting laser element includes a first reflecting mirror; an active layer over the first reflecting mirror; a second reflecting mirror over the active layer; and a multilayer film over the second reflecting mirror. The multilayer film has a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror. The multilayer film includes, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index. The multilayer film has a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface. The peripheral portion includes the side surface.

A photonic integrated device is provided, includes a substrate, a two-dimensional material unit and semiconductor light-emitting units located at both sides thereof are disposed on the substrate; the two-dimensional material unit is provided with a luminescent two-dimensional material of which a luminous band is longer than that of the semiconductor light-emitting unit, and the semiconductor light-emitting unit provides a pump light source for the two-dimensional material unit to pump the luminescent two-dimensional material to emit light. The photonic integrated device in the present disclosure can obtain different luminous bands by changing the number of layers or kinds of the luminescent two-dimensional material. Meanwhile, the photonic integrated device according to the present disclosure adopts an optical pumping luminescence method without forming a p-n junction, which simplifies process difficulty compared with an electrical pumping luminescence method of manufacturing the p-n junction based on the luminescent two-dimensional material in the prior art.

A single crystal silicon carbide substrate includes a substrate of a single crystal silicon carbide; a first wiring film and a second wiring film disposed on one side of the substrate and having therebetween an interstice which is formed continuously without being broken from a first end of the one side to a second end of the one side; and an insulating portion disposed in the interstice between the first wiring film and the second wiring film and including a surface texture of the one side exposed by removing using dry etching a surface contaminated layer which is contaminated by at least one of iron, aluminum, chromium, or nickel adhered thereto.

Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not only has a high doping concentration, but also the epitaxial layer can be oxidized and the oxidation rate is relatively stable during the oxidation process. Alternatively, the n-type semiconductor layer is doped with at least two elements. As a result, the oxidation process of the VCSEL can be stably performed, and the resistance of the tunnel junction with a high doping concentration is low. The tunnel junction is suitable to be arranged between two active layers of the VCSEL or between the p-type semiconductor and the n-type semiconductor layer of the VCSEL.