Provided is an optical communication module. The optical communication module includes: an optical device configured to provide an optical output from an electrical input; a circuit board on which the optical device is mounted and which is configured to provide the electrical input to the optical device; a temperature compensation element mounted on a side of the circuit board; and a mechanical switch connected to the temperature compensation element and configured to turn on/off according to ambient temperature for supplying or interrupting power to the temperature compensation element. The optical communication module includes the temperature compensation element configured to heat or cool the optical device according to ambient temperature, thereby maintaining proper modulation performance and optical power over a wide range of temperature in low-temperature and high-temperature environments.

A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.

A technique related to a semiconductor chip is provided. An optical gain chip is attached to a semiconductor substrate. An integrated photonic circuit is on the semiconductor substrate, and the optical gain chip is optically coupled to the integrated photonic circuit thereby forming a laser cavity. The integrated photonic circuit includes an active intra-cavity thermo-optic optical phase tuner element, an intra-cavity optical band-pass filter, and an output coupler band-reflect optical grating filter with passive phase compensation. The active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and the output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

A laser diode chip includes a removable substrate, a first semiconductor layer disposed on the removable substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the removable substrate covers a part of projections of the first electrode and the second electrode projected to the removable substrate.

An optical package for providing efficient coupling between a distributed feedback laser diode (DFB-LD) and a silicon photonic integrated-circuit chip (Si PIC) edge couplers with low return loss, as well as variations thereof, is described. The optical package may include a DFB-LD, a Si PIC, a single mode fiber or fiber array assembly, a lens and a spacer. The Si PIC may include an input edge coupler and an output edge coupler. The single mode fiber or fiber array assembly may be aligned to the output edge coupler. The lens may be disposed between the DFB-LD and the input edge coupler, and may be configured to minimize a mismatch between an output spot size of the DFB-LD and a spot size of the input edge coupler of the Si PIC. The spacer may be bonded to a facet of the input edge coupler with an index matching fluid.

A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 μm to 120 μm on the light emission surface. The plurality of emitters have a pitch of 295 μm to 305 μm on the light emission surface.

A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.

A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate with a proximity sensor thereon, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. Also, with the manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the one of the proximity sensor is thereby minimized.

To provide a laser oscillator, in which an LD module is fixed to a cooling plate through insulated fixation that is superior in durability, cost, and workability in an insulated fixation operation. A laser oscillator includes an LD module. The LD module has one or a plurality of LD light source(s), and is placed on a thermally conductive insulating member placed on a cooling plate. The LD module of the laser oscillator is fixed to the cooling plate, via an elastic insulating member fixed to the cooling plate.