H01S5/022

Semiconductor Device and Method
20220045254 · 2022-02-10 ·

In an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.

A LIGHT EMITTING DEVICE
20170256685 · 2017-09-07 ·

The present invention relates to a light emitting device comprising: a substrate; a translucent light mixing element arranged on the substrate; a color converting element arranged on top of the translucent light mixing element and arranged such that light from the translucent light mixing element is coupled into the color converting element; and a laser diode configured to emit light of a first color into the translucent light mixing element; wherein the color converting element is configured to convert a part of the light of the first color to a second color, to mix light of the first color with light of the second color to generate light of a third color, and to emit light of the third color; and wherein the translucent light mixing element has a thermal conductivity exceeding 10 W/mK.

LASER ACTIVE MEDIUM AND PROCESS OF MANUFACTURING THE SAME
20170256904 · 2017-09-07 ·

A solid-state laser active medium comprising an optical gain material; a heat sink, wherein the heat sink is transparent, in particular over a wavelength range of 200 nm to 4000 nm, preferably with an absorption coefficient of <1 cm.sup.−1; the heat sink having a high thermal conductivity, in particular ≧149 W/(m*K); wherein the optical gain material and the heat sink exhibit a root-mean square, RMS, surface roughness of <1 nm; wherein the optical gain material is attached to the transparent heat sink by direct bonding.

SUBSTRATE FOR MOUNTING A LIGHT-EMITTING ELEMENT, ARRAY SUBSTRATE, AND LIGHT-EMITTING DEVICE

A substrate for mounting a light-emitting element includes a base and a dam part. The base includes a front surface and a back surface that are principal surfaces thereof where the front surface includes a mounting part that is capable of mounting a light-emitting element thereon. The dam part is arranged on a peripheral part of the front surface to surround the mounting part. The front surface is inclined relative to the back surface at a predetermined angle. The dam part is provided with an opening part at a site where the front surface is inclined to decrease a thickness of the base, in the peripheral part of the front surface. A site of the dam part where the opening part is provided is inclined relative to the back surface in a direction of the front surface.

SUBSTRATE FOR MOUNTING AN ELECTRONIC COMPONENT, ELECTRICAL DEVICE, AND LIGHT-EMITTING DEVICE

A substrate for mounting an electronic component according to an aspect of an embodiment includes a base that is a plate-shaped body, where a first surface of the base is sloped relative to a second surface that is opposed to the first surface, and when the base is bisected into a lower part and a higher part in a slope direction thereof, a thermal conductivity of the lower part is higher than a thermal conductivity of the higher part.

SEMICONDUCTOR LASER APPARATUS AND SEMICONDUCTOR LASER DEVICE

A semiconductor laser apparatus includes: a semiconductor laser device for junction down mounting that includes a first light-emitting device region and a second light-emitting device region formed separately on a substrate. The first light-emitting device region and the second light-emitting device region in the semiconductor laser device each have a stack structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked in stated order. The first light-emitting device region includes a first electrode film located on the n-type semiconductor layer. The second light-emitting device region includes a second electrode film located on the p-type semiconductor layer. The first electrode film and the second electrode film are electrically connected to each other.

Semiconductor Side Emitting Laser Leadframe Package and Method of Producing Same
20210376563 · 2021-12-02 ·

A surface mount laser package for a side-looking semiconductor laser has a substantially planar leadframe with a component side and a board attach side. The component side has a conductive die attach pad and a plurality of wire bond pads. A laser die has an anode surface and a cathode surface, where the cathode surface is mounted to the conductive die attach pad. A plurality of bond wires span between the laser die anode surface and a wire bond pad. A molding encases the laser die and the plurality of bond wired on the component side of the leadframe and also lies between the conductive die attach pad and each of the wire bond pads within a plane of the leadframe. The conductive die attach pad has a metallization layer on the leadframe and each of the bond pads has a metallization layer on the leadframe.

OPTICAL MODULE

An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a laser diode, a first MEMS including a first mirror having a first reflective surface that reflects and scans light from the laser diode, the first mirror oscillating to form a first plane, and a second MEMS including a second mirror having a second reflective surface that reflects and scans light from the first mirror, the second mirror oscillating to form a second plane orthogonal to the first plane.

Light emitting device

Alight emitting device (A) includes a laser light source (1) that emits laser light (100), a housing (2A) that includes a bottom wall (3) and a side wall, and a first wavelength converter (20) provided on the side wall, the first wavelength converter (20) containing a first phosphor. The bottom wall of the housing is irradiated with the laser light emitted from the laser light source, and the first phosphor is excited by diffused light of the laser light diffused by the bottom wall. With such a configuration, the light emitting device (A) improves color uniformity and chromaticity flexibility while increasing power density of output light.

Housing for an electronic component, and laser module
11367992 · 2022-06-21 · ·

A housing for an electronic component, in particular for a laser diode, is provided. The housing includes a mounting area for the electronic component and has a lateral wall provided with a feedthrough for a light guide. The base wall of a basic body of the housing has both a heat sink for a thermoelectric cooler and a plurality of feedthroughs for pins for electrically connecting the electronic component.