A socket for an electronic component includes: an electrically insulating material; a base body including at least one opening configured for accommodating an electrically conductive pin configured for being electrically connected to the electronic component, the at least one opening being sealed with the electrically insulating material such that the electrically conductive pin is fed through the at least one opening while being electrically insulated from the base body; and a shell part including a pedestal configured for accommodating the electronic component, at least the shell part of the socket including a metal with a thermal conductivity of at least 100 W/mK.

A laser system comprising high voltage AC-to-DC power converter and one or more current sources coupled to the high voltage AC-to-DC power converter without a DC-to-DC converter between the one or more current sources and the AC-to-DC power source. Each of the one or more current sources includes a high voltage switch and one or more independent safety shutoffs. A laser module is operably coupled to the one or more current source and configured to emit electromagnetic radiation wherein the one or more safety shutoffs are configured to disable emission of electromagnetic radiation from the laser module when triggered.

A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

In various embodiments, laser devices include a thermal bonding layer featuring an array of carbon nanotubes and at least one metallic thermal bonding material.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).

A quantum-cascade laser element includes: an embedding layer including a first portion formed on a side surface of a ridge portion, and a second portion extending from an edge portion of the first portion on a side of a semiconductor substrate along a width direction of the semiconductor substrate; and a metal layer formed at least on a top surface of the ridge portion and on the first portion. A surface of the second portion on a side opposite to the semiconductor substrate is located between a surface of an active layer on a side opposite to the semiconductor substrate and a surface of the active layer on a side of the semiconductor substrate. When viewed in the width direction of the semiconductor substrate, a part of the metal layer on the first portion overlaps the active layer. The metal layer is directly formed on the first portion.

A laser comprising a photonic component comprising a gain medium; and a waveguide platform comprising a Distributed Bragg Reflector, DBR, section. The photonic component is optically coupled to the waveguide platform. One or more thermal heaters are positioned at the DBR section of the waveguide platform, and/or at a phase section of the waveguide platform located between the gain medium and the DBR section.

A laser source (340) that generates an output beam (354) that is directed along a beam axis (354A) that is coaxial with a first axis and orthogonal to a second axis comprises a first frame (356), a laser (358), and a first mounting assembly (360). The laser (358) generates the output beam (354) that is directed along the beam axis (354A). The first mounting assembly (360) couples the laser (358) to the first frame (356). The first mounting assembly (360) allows the laser (358) to expand and contract relative to the first frame (356) along the first axis and along the second axis, while maintaining alignment of the output beam (354) so the beam axis (354A) is substantially coaxial with the first axis. The first mounting assembly (360) can include a first fastener assembly (366) that couples the laser (358) to the first frame (356), and a first alignment assembly (368) that maintains alignment of the laser (358) along a first alignment axis (370) that is substantially parallel to the first axis.