A thermo-optical ground plane includes a plate configured to mount a diode laser device defining a first surface area, an evaporation chamber in thermal communication with the plate, and a channel defined in thermal communication with the evaporation chamber. The channel is configured to receive and circulate a coolant fluid at a predetermined flowrate. The evaporation chamber is configured to receive a working fluid. The inner walls of the evaporation chamber define a second surface area that is greater than the first surface area of the diode laser device. The plate comprises beam shaping and folding optics for collimating and focusing the light from the diode laser device on an optical fiber. Light from a plurality of thermo-optical ground planes is combined on a single optical fiber. The structure enables cooling with exceptionally low coolant flowrate while also maintaining small specific volume and small specific weight.

The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

A diode-laser bar assembly comprises a diode-laser bar mounted onto a cooler by way of an electrically-insulating submount. A laminated connector is provided that includes two electrically-conducting sheets bonded to opposite sides on an electrically-insulating sheet. An electrical insulator is located between the laminated connector and the cooler. One electrically-conducting sheet is connected to n-side of the diode-laser bar and the other electrically-conducting sheet is connected to p-side of the diode-laser bar.

A semiconductor device includes: a bottom plate having an upper surface and a lower surface, wherein the upper surface comprises an outer peripheral part and an inside part that is enclosed by the outer peripheral part and that protrudes more upward than the outer peripheral part; a frame joined to the upper surface of the bottom plate and comprising a first through-hole that penetrates the frame; a plate jointed to the outside or inside surface of the frame, the plate comprising a second through-hole that penetrates the plate in a same direction as that of the first through-hole, a thickness of the plate being greater than a thickness of the frame; a lead terminal inserted into the first through-hole and the second through-hole; a fixing member provided in the second through-hole and fixing the lead terminal; and a semiconductor element fixed to the inside part.

A structure for cooling a semiconductor element includes an element body and a lead terminal extending from one surface of the element body in a direction intersecting the one surface. The semiconductor element cooling structure includes a heat sink. The heat sink includes a contact surface that is in contact with the one surface of the element body, a through-hole which is formed in the contact surface and through which the lead terminal passes, and a space portion that communicates with the through-hole and that is configured to house a substrate connected to the lead terminal.

A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A light emitting device includes: a substrate including a main surface; a first projection positioned on the main surface, the first projection including an upper surface and first and second lateral surfaces, wherein the first lateral surface of the first projection comprises a first reflective part, and the second lateral surface of the first projection comprises a second reflective part; a first laser element positioned on the main surface at a first reflective part side with respect to the first projection, the first laser element being configured to irradiate first laser light to the first reflective part; a second laser element positioned on the main surface at a second reflective part side with respect to the first projection, the second laser element being configured to irradiate second laser light to the second reflective part; and a first optical member bonded to the upper surface of the first projection.

The invention relates to a radiation-emitting semiconductor laser comprising—a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, —a resonator which has a first end region and a second end region, and —a first sensor layer which is designed to measure the temperature of the semiconductor body, wherein the active region is located in the resonator in such a way that the electromagnetic radiation generated in the active region during operation is electromagnetic laser radiation, and —the first sensor layer is located in the first active end region of the resonator. The invention also relates to a method for operating a radiation-emitting semiconductor laser.

The invention relates to a radiation-emitting semiconductor laser comprising—a semiconductor body comprising an active region which is designed to generate electromagnetic radiation, —a resonator which has a first end region and a second end region, and —a first sensor layer which is designed to measure the temperature of the semiconductor body, wherein the active region is located in the resonator in such a way that the electromagnetic radiation generated in the active region during operation is electromagnetic laser radiation, and —the first sensor layer is located in the first active end region of the resonator. The invention also relates to a method for operating a radiation-emitting semiconductor laser.