A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

An excess heat-generating element is coupled to a heat sink through a heat conduction path. A thermal switch is mounted in the heat conduction path. A temperature-sensitive element is coupled to the heat conduction path on a same side of the thermal switch as the excess heat-generating element. A temperature monitor is mounted adjacent the temperature-sensitive element. A temperature controller has an input coupled to the temperature output of the temperature monitor and an output control line coupled to an input of the thermal switch. The temperature controller switches off the thermal switch, in response to detecting a temperature below a temperature threshold from the temperature output. When the thermal switch it off, it impedes heat flow from the excess heat-generating element to the heat sink, and the heat flow is redirected to increase heat flow from the excess heat-generating element to the heat-sensitive element.

A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.

In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.

A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

A chip package structure includes a substrate having a first surface and a second surface being opposite surfaces of the substrate; a housing disposed on the first surface of the substrate and enclosing a chip region; and a chip set disposed in the chip region and electrically connected to the substrate. The chip set includes a first chip and a second chip, and an active surface of the second chip faces the active surface of the first chip.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A 2nd signal line has impedance lower than impedance of a 1st signal line. A capacitor includes a 1st extension part and a 2nd extension part, a 1st ground part and a 2nd ground part. The 1st extension part and the 2nd extension part are connected to a 2nd signal line and are provided on an insulation substrate to extend along a longitudinal direction of the 2nd signal line. The 1st ground part and the 2nd ground part are at least a part of a ground pattern, and are provided between the 1st extension part and the 2nd extension part and the 2nd signal line, and between the 1st extension part and the 2nd extension part and an end part of the insulation substrate, to be electrically coupled with the 1st extension part and the 2nd extension part.

A method of manufacturing a cooling element, including: providing at least one first metal layer and at least one second metal layer, oxidizing the at least one first metal layer and/or the at least one second metal layer, structuring the at least one first metal layer and/or the at least one second metal layer to form at least one recess, joining the at least one first metal layer and the at least one second metal layer to form the cooling element, wherein, in the joined state, at least a partial section of a cooling channel in the cooling element is formed by the recess in the at least one first metal layer and/or the at least one second metal layer, and wherein, prior to the joining, an inner side of the recess is provided at least in sections free of an oxidized surface.