In some implementations, an opto-electrical device includes a heatsink; a thermally conductive element disposed on a first region of a surface of the heatsink; an adaptive thickness thermally conductive pad disposed on the thermally conductive element; an integrated circuit (IC) disposed on the adaptive thickness thermally conductive pad; a thermoelectric cooler (TEC) disposed on a second region of the surface of the heatsink; an opto-electrical chip disposed on the TEC; and a substrate disposed on the IC and the opto-electrical chip, wherein the substrate is configured to electrically connect the IC and the opto-electrical chip.

An optical module includes: an optical element; a housing configured to house the optical element; as electrical terminal arranged on an outer peripheral surface of the housing and electrically connected to an inside of the housing; and a positioning unit configured to determine a relative position of a wiring board electrically connected to the electrical terminal from outside of the housing, with respect to the electrical terminal.

Heatsinking in laser devices may be improved via a device, including: a header disk having a first face with a circumference; a header post that is thermally conductive, and having: a second face connected to the first face coterminously with the circumference; a third face opposite to the second face; and a fourth face perpendicular to the second face and the third face; a lens holder, having a fifth face connected to the third face; and an optical subassembly connected to the fourth face and optically aligned with the lens holder. The device may also be understood to comprise: a header disk having a circumference; a header post that is thermally conductive, the header post having: an arc coterminous to a portion of the circumference; a mounting face, perpendicular to a plane in which the arc and the circumference are defined; and a bonding face perpendicular to the mounting face.

Exemplary methods and apparatus may provide optical gates and optical switches using such optical gates. Each optical gate may include a semiconductor optical amplifier that is placed in a substrate. The semiconductor optical amplifier may be coupled to input and output couplers to receive and selectively output optical signals into and out of the substrate.

A VCSEL device includes an N-type metal substrate and laser-emitting units on the N-type metal substrate. Each laser-emitting unit includes an N-type contact layer in contact with the N-type metal substrate; an N-type Bragg reflector layer in contact with the N-type contact layer; a P-type Bragg reflector layer above the N-type Bragg reflector layer; an active emitter layer between the P-type Bragg reflector layer and the N-type Bragg reflector layer; a current restriction layer between the active emitter layer and the P-type Bragg reflector layer; a P-type contact layer in contact with the P-type Bragg reflector layer; and an insulation sidewall surrounding all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer. A P-type metal substrate has through holes each aligned with a current restriction hole of a corresponding laser-emitting unit.

A package for at least one laser diode includes: leads configured to be electrically connected to the at least one laser diode; a base including a mounting surface on which the at least one laser diode is to be mounted and a lateral wall located around the mounting surface so as to surround the at least one laser diode, the lateral wall defining first through-holes and including a light-transmissive part configured to transmit a laser beam emitted from the at least one laser diode; and a lead holding member bonded to the lateral wall of the base and defining second through-holes. The leads are disposed through the first through-holes and the second through-holes. At least a central portion of each of the leads is made of copper.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

An opto-electric composite transmission module includes an opto-electric hybrid board, a printed wiring board, an opto-electric conversion portion, a first heat transfer member, and a case made of metal. The opto-electric hybrid board, the opto-electric conversion portion, the first heat transfer member, and a first wall of the case are disposed in order toward one side in a thickness direction. The printed wiring board integrally has a first portion and a second portion spaced apart from each other, and a connecting portion for connecting these when viewed from the top. The first portion, the second portion, and the connecting portion include a first overlapped region. The first overlapped region is overlapped with the opto-electric hybrid board without being overlapped with the opto-electric conversion portion when projected in the thickness direction. The first overlapped region is overlapped with the opto-electric conversion portion when projected in a plane direction.

A semiconductor device includes: a base including a base surface; a mesa protruding from the base surface in a first direction intersecting the base surface, the mesa including a top surface and two side surfaces on both sides of the top surface, and extending along the base surface; and an electric resistor including a top wall provided on the top surface and a side wall provided on at least one of the two side surfaces, the electric resistor being configured such that a current flows in an extending direction of the mesa.

An optical semiconductor device includes: a base including a base surface; a mesa protruding from the base surface in a first direction intersecting the base surface and extending along the base surface; an optical waveguide layer provided inside the mesa or provided inside the base so as to have a region at least overlapping with the mesa in the first direction; an electric resistance layer including a first region provided on the mesa, and a first extending portion extending from the first region in a direction intersecting an extending direction of the mesa; and a wiring layer including a second region electrically connected to the electric resistance layer and configured to partially cover the first region, and a second extending portion configured to at least partially cover the first extending portion and extending from the second region in a direction intersecting the extending direction of the mesa.