To provide a light-emitting apparatus capable of shaping light from a plurality of light-emitting elements into light with a plurality of shapes and a manufacturing method thereof. A light-emitting apparatus according to the present disclosure, including: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and a plurality of first lenses which are provided on a side of a second surface of the substrate and on which light emitted from the plurality of light-emitting elements is incident, wherein the plurality of first lenses include at least two types of lenses among a concave lens, a convex lens, and a flat lens.

A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, an index matching layer and a photonic crystal structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The index matching layer is disposed over the n-type cladding layer and is arranged around the active layer. The index matching layer is electrically insulating, and an effective refractive index of the index matching layer is substantially identical to an effective refractive index of the active layer. The photonic crystal structure is disposed over the active layer and the index matching layer.

One aspect provides a method for providing a short electrical pulse using a switching circuit, the method including: providing a forward current to at least one semiconductor diode electrically connected with and controlling electrical current to an electrical component within a circuit; and switching the at least one semiconductor diode into a reverse bias by applying a reverse voltage to the at least one semiconductor diode, thereby causing the at least one semiconductor diode to enter a reverse recovery state and controlling a destination of the electrical current and generating the short electrical pulse to the destination for the duration of the reverse recovery state; the duration of the reverse recovery state being based upon a value of the forward current and a value of the reverse voltage.

A buck-boost power converter is operable in a first mode (step-down) or in a second mode (step-up). The power converter has an inductor, a flying capacitor, a network of six switches and a driver adapted to drive the network of switches with a sequence of states. Depending on the mode of operation the sequence of states comprises at least one of a first state and a second state. In the first state the ground port is coupled to the second port via two paths, a first path comprising the flying capacitor and the inductor, and a second path comprising the flying capacitor while bypassing the inductor. In the second state the first port is coupled to the second port via a path that includes the inductor and the ground port is coupled to the first port via a path that includes the flying capacitor while bypassing the inductor.

A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere. By covering the cracks that occur in the insulation film in the production process with the insulation film made of SiO.sub.2, SiN.sub.X, SiON.sub.X or the like, an organic solvent such as acetone or ethanol used in the process can be prevented from seeping in between the insulation film and the organic material through the cracks in the insulation film.

Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Disclosed herein are various embodiments for stronger and more powerful high speed laser arrays. For example, an apparatus is disclosed that comprises an active mesa structure in combination with an electrical waveguide, wherein the active mesa structure comprises a plurality of laser regions within the active mesa structure itself, each laser region of the active mesa structure being electrically isolated within the active mesa structure itself relative to the other laser regions of the active mesa structure.

Provided is a variable-wavelength surface emission laser having a wide wavelength variation range. A partial region of a thin-plate substrate (22) and a movable mirror (20), the partial region being positioned between an air gap (G1) and a movable gap (G2), can move toward the air gap (G1) side or the movable gap (G2) side.

A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.

The present disclosure provides an apparatus for generating fiber delivered laser-induced white light. The apparatus includes a package case enclosing a board member with an electrical connector through a cover member and a laser module configured to the board member inside the package case. The laser module comprises a support member, at least one laser diode device configured to emit a laser light of a first wavelength, a set of optics to guide the laser light towards an output port. Additionally, the apparatus includes a fiber assembly configured to receive the laser light from the output port for further delivering to a light head member disposed in a remote destination. A phosphor material disposed in the light head member receives the laser light exited from the fiber assembly to induce a phosphor emission of a second wavelength for producing a white light emission substantially reflected therefrom for various applications.