Provided is an electronic device capable of reducing the possibility of malfunction. An electronic device is provided with: a first substrate including a drive circuit; a second substrate including a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; and a light-shielding unit provided on the first substrate and configured to shield at least a part of the drive circuit from light emitted by the light-emitting unit.

A light emitting device includes a plurality of semiconductor laser elements, a frame part, a light-reflective member, a plurality of wires, and first and second protective elements. The frame part has a pair of first inner lateral surfaces and a second inner surface. The light-reflective member is configured to reflect laser light traveling from at least one of the plurality of semiconductor laser elements toward one of the first inner lateral surfaces of the frame part. The wires electrically connect the semiconductor laser elements respectively to an upper surface of the frame part. The first and second protective elements are disposed on the upper surface of the frame part in an area of the upper surface along the second inner surface. At least one of the wires is bonded on an area of the upper surface between the first and second protective elements.

A laser light source may include an arrangement of surface-emitting semiconductor lasers to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser which emits radiation that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation. The emission frequency of the first semiconductor laser can be changed by changing the operating current.

A Group-III nitride light emitting device that utilizes scattering of hot carriers generated by Auger recombination from an externally electrically-driven, relatively narrow band gap carrier generation region into a relatively wide band gap carrier recombination region, such that the relatively wide band gap carrier recombination region of the Group-III nitride light emitting device is internally electrically injected by the hot carriers generated in the externally electrically-injected relatively narrow band gap carrier generation region. The device is used for generation of incoherent light (a light-emitting diode) or coherent light (a laser diode).

A depth obtaining component includes a laser driver array and a laser array. The laser array includes a plurality of lasers. The laser driver array includes one or more control units, and each control unit is configured to control selection of one or more lasers in the laser array. The one or more control units are disposed in a charge loop of the laser driver array. A laser corresponding to the control unit can be flexibly selected based on a first switch module and a capacitive module in the control unit. In this way, scanning laser emission of the laser array can be implemented based on the laser drive circuit, no scanning device such as a micro electro mechanical systems mirror needs to be additionally disposed, and circuit support can be provided for implementing a small-sized, power-efficient, and cost-effective optical transmit end.

Compact optical sources and methods for producing short and ultrashort optical pulses are described. A semiconductor laser or LED may be driven with a bipolar waveform to generate optical pulses with FWHM durations as short as approximately 85 ps having suppressed tail emission. The pulsed optical sources may be used for fluorescent lifetime analysis of biological samples and time-of-flight imaging, among other applications.

A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.

A system for controlling a pulsed laser diode includes a power source configured to supply power to the pulsed laser diode and at least one driving branch between the power source and the pulsed laser diode. The at least one driving branch is configured to control power delivery from the power source to the pulsed laser diode. The at least one driving branch is connected to a cathode of the pulsed laser diode.

A light module has a carrier with a circuit die. On the top side of the carrier, a light-emitting diode die, and a charge store component are electrically connected to the conduction path terminal fields of a transistor by means of die-to-die bondings. The electrical connection between the two dies and the conduction path of the transistor is as short as possible. A terminal field is situated in each case on the top side of the two dies, which terminal fields are connected to one another using a first bonding wire. The charge store component is charged by means of a charging circuit which is electrically connected to the charge store component via a second bonding wire. The second bonding wire is longer than the first bonding wire. The light module may be part of a LIDAR apparatus.