The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

A vertical cavity surface emitting laser (VCSEL) has first and second electrical contacts, and an optical resonator. The optical resonator has first and second distributed Bragg reflectors (DBRs), an active layer, a distributed heterojunction bipolar phototransistor (DHBP), and an optical guide. The DHBP has a collector layer, light sensitive layer; a base layer; and an emitter layer. There is an optical coupling between the active layer and the DHBP for providing an active carrier confinement by the DHBP. The optical guide guides an optical mode within the optical resonator during operation. The optical guide is outside a current flow which can be provided by the first and second electrical contacts during operation of the VCSEL. The optical guide is outside a layer sequence between the first and second electrical contacts in the vertical direction of the VCSEL. The optical guide has an oxide aperture arranged in the second DBR.

A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.

A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).

A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.

A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

A semiconductor optical device includes an active layer, the active layer including a plurality of quantum well layers having gain peak wavelengths different from one another in a layering direction thereof, and a plurality of barrier layers, wherein the quantum well layers and the barrier layers are alternately layered over each other, and an n-type dopant has been added in the plurality of quantum well layers having gain peak wavelengths different from one another and in the plurality of barrier layers.

An oscillation wavelength adjustment type TLD for adjusting a control amount of a resonator length L, independently from physical property values of a waveguide material when a waveguide is used in the phase adjustment, without an external resonator structure in accordance with a MEMS technology employs a reflective phase adjuster (20) including a multi-mode interference waveguide (21), which is optically coupled to an optical gain waveguide and has a configuration including one input port and five output ports, and a reflective delay line array (25) connected to an output waveguide on a side of the five output ports of the multi-mode interference waveguide (21). Five reflective delay lines (24-0 to 24-4) provided in the reflective delay line array (25) are capable of adjusting the intensity of reciprocating light in accordance with a wavelength change of transmitted light. The intensity of the reciprocating light can also be adjusted by an electric signal applied from the outside.

The invention describes a Vertical Cavity Surface Emitting Laser and a method of manufacturing such a Vertical Cavity Surface Emitting Laser. The Vertical Cavity Surface Emitting Laser comprising a first electrical contact (105, 405, 505, 605, 705), a substrate (110, 410, 610, 710), a first distributed Bragg reflector (115, 415, 615, 715), an active layer (120, 420, 620, 720), a distributed heterojunction bipolar phototransistor (125, 425, 625, 725), a second distributed Bragg reflector (130, 430, 630, 730) and a second electrical contact (135, 435, 535, 635, 735), the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) comprising a collector layer (125a), a light sensitive layer (125c), a base layer (125e) and an emitter layer (125f), wherein the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) is arranged such that there is an optical coupling between the active layer (120, 420, 620, 720) and the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor (125, 425, 625, 725) such that an optical mode of the Vertical Cavity Surface Emitting Laser is self-positioning in accordance with the active carrier confinement during operation of the Vertical Cavity Surface Emitting Laser. It is the intention of the present invention to provide a VCSEL which can be easily and reliably processed by integrating the distributed heterojunction bipolar phototransistor (125, 425, 625, 725).

Provided is a semiconductor laser device in which a distributed feedback laser part and an electro-absorption modulator part are formed on the same semiconductor substrate, and laser light emitted from the laser part is emitted from an emission end face of the modulator part. The laser part includes a first diffraction grating formed to extend in a direction of an optical axis of the laser light and the modulator part partially including a second diffraction grating formed to extend in the direction of the optical axis of the laser. A non-diffraction grating region in which a diffraction grating is not formed is interposed between the second diffraction grating of the modulator part and an emission end face of the laser part from which the laser light is emitted to the modulator part.