The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

The technology described in this document can be used to implement an optical device for producing optical pulses that includes an optical oscillator including at least one optical arm including at least one piece of fiber and at least one optical filter, a starting arm coupled to the at least one optical arm to generate spikes of radiation for the optical oscillator to start pulsation, and an optical switch coupled between the optical oscillator and the starting arm to connect the starting arm to the at least one optical arm to start the optical oscillator using the spikes of radiation generated by the starting arm.

A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

There is disclosed a DBR laser and a method of use. The DBR laser comprises a phase section in a cavity of the DBR laser and configured to adjust an optical path length of the cavity. A DBR section comprises a frequency tuning system configured to adjust a Bragg frequency of the DBR section. A detector is configured to detect laser light transmitted through the DBR section. A controller is configured: to cause the phase section to apply a dither to the optical path length of the cavity or cause the frequency tuning system to apply a dither to the Bragg frequency of the DBR section; to use the detector to monitor intensity of light transmitted from the laser cavity via the DBR section during application of the dither; to determine a deviation from longitudinal mode centre operation on the basis of the monitored intensity; and to cause the frequency tuning system to adjust the Bragg frequency of the DBR section in order to reduce said deviation, or cause the phase section to adjust the optical path length of the cavity in order to reduce said deviation.

The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

A semiconductor laser element includes a semiconductor epitaxial structure, a light-absorbing structure, a transparent conductive layer, and an electrode layer. The semiconductor epitaxial structure includes a light-emitting layer and a light-emitting control layer. The light-emitting control layer forms a light-emitting opening area. The light-absorbing structure forms a hollow part to expose the semiconductor epitaxial structure. The band gap of the light-absorbing structure is smaller than the light-emitting band gap. The transparent conductive layer includes a recessed window part and an extension part. The recessed window part is located in the hollow part and covers the semiconductor epitaxial structure. The extension part covers the light absorbing structure. The electrode layer forms an opening to expose to the transparent conductive layer, and the opening of the layer, and the recessed window part is located in the opening. The position of the recessed window part corresponds to that of the light-emitting opening area.

A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.

A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.