A device comprises a substrate, a sacrificial material layer over the substrate, a first solid-state material layer over the sacrificial layer, a dielectric layer over solid-state material layer, and a second solid-state material layer over the dielectric layer. The sacrificial material layer may have an airgap, the solid-state material layer may comprise a structure over the airgap and may be separated from a bulk portion of the first material layer by trenches, where the trenches extend to the airgap.

A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.

There is disclosed a DBR laser and a method of use. The DBR laser comprises a phase section in a cavity of the DBR laser and configured to adjust an optical path length of the cavity. A DBR section comprises a frequency tuning system configured to adjust a Bragg frequency of the DBR section. A detector is configured to detect laser light transmitted through the DBR section. A controller is configured: to cause the phase section to apply a dither to the optical path length of the cavity or cause the frequency tuning system to apply a dither to the Bragg frequency of the DBR section; to use the detector to monitor intensity of light transmitted from the laser cavity via the DBR section during application of the dither; to determine a deviation from longitudinal mode centre operation on the basis of the monitored intensity; and to cause the frequency tuning system to adjust the Bragg frequency of the DBR section in order to reduce said deviation, or cause the phase section to adjust the optical path length of the cavity in order to reduce said deviation.

Described are various configurations of integrated wavelength lockers including asymmetric Mach-Zehnder interferometers (AMZIs) and associated detectors. Various embodiments provide improved wavelength-locking accuracy by using an active tuning element in the AMZI to achieve an operational position with high locking sensitivity, a coherent receiver to reduce the frequency-dependence of the locking sensitivity, and/or a temperature sensor and/or strain gauge to computationally correct for the effect of temperature or strain changes.

Described are various configurations of integrated wavelength lockers including asymmetric Mach-Zehnder interferometers (AMZIs) and associated detectors. Various embodiments provide improved wavelength-locking accuracy by using an active tuning element in the AMZI to achieve an operational position with high locking sensitivity, a coherent receiver to reduce the frequency-dependence of the locking sensitivity, and/or a temperature sensor and/or strain gauge to computationally correct for the effect of temperature or strain changes.

Methods for driving a tunable laser with integrated tuning elements are disclosed. The methods can include modulating the tuning current and laser injection current such that the laser emission wavelength and output power are independently controllable. In some examples, the tuning current and laser injection current are modulated simultaneously and a wider tuning range can result. In some examples, one or both of these currents is sinusoidally modulated. In some examples, a constant output power can be achieved while tuning the emission wavelength. In some examples, the output power and tuning can follow a linear relationship. In some examples, injection current and tuning element drive waveforms necessary to achieve targeted output power and tuning waveforms can be achieved through optimization based on goodness of fit values between the targeted and actual output power and tuning waveforms.

A hybrid single or multi-wavelength laser using an optical gain element, such as a semiconductor optical amplifier (SOA), for example a QD RSOA, and a semiconductor, e.g. silicon, photonics chip is demonstrated. A plurality, e.g. four, lasing modes at a predetermined, e.g. 2 nm, spacing and less than 3 dB power non-uniformity may be observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10.sup.9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

Provided is a laser light source device stably operating, stably emitting laser light having a predetermined wavelength, and ensuring lower power consumption than that of the related art. The laser light source device includes a semiconductor laser element, a heat radiation part provided on one surface side of the semiconductor laser element, a heat conductive part having heat conductive characteristics, provided in contact with the one surface of the semiconductor laser element and the heat radiation part, configured to conduct heat generated in the semiconductor laser element to the heat radiation part, a wavelength measuring part configured to measure a wavelength of laser light, and a heat conductive characteristic control part configured to change the heat conductive characteristics of the heat conductive part based on the wavelength of the laser light, and control the wavelength of the laser light to fall within a predetermined wavelength range.

A semiconductor laser oscillator includes laser diode modules. A temperature sensor directly or indirectly detects a temperature of at least one of the laser diode modules. A collimating lens collimates respective lasers emitted from the laser diode modules. A grating performs spectrum beam coupling for the lasers emitted from the collimating lens. An incident angle varying mechanism changes incident angles of the respective lasers, at which the lasers emitted from the collimating lens are incident onto the grating in response to the temperature detected by the temperature sensor.