A pressure sensing device including a light source, at least one resonant structure, a cladding body, a first substrate and a second substrate is provided. The light source is configured to provide an original broadband light. The resonant structure includes a plurality of semiconductor rod structures arranged into a row at intervals along a single arranging direction, and each of the semiconductor rod structures has a lattice constant on the arranging direction. The original broadband light is transmitted between the semiconductor rod structures, and a resonant light is produced, wherein each of the semiconductor rod structures has a length perpendicular to the arranging direction and has a width parallel to the arranging direction, the length and the width are less than the wavelength of the resonant light. The cladding body completely covers the semiconductor rod structures of the at least one resonant structure. The cladding body and the at least one resonant structure are interposed between the first substrate and the second substrate. When a pressure is applied on at least one of the first substrate and the second substrate, the pressure is transmitted to the cladding body along a direction perpendicular to the arranging direction, a deformation corresponding to the pressure is occurred on the cladding body and the semiconductor rod structures on the arranging direction, and a wavelength of the resonant light is changed according to the deformation. Besides, a pressure sensing apparatus is also provided.

Described are various configurations of integrated wavelength lockers including asymmetric Mach-Zehnder interferometers (AMZIs) and associated detectors. Various embodiments provide improved wavelength-locking accuracy by using an active tuning element in the AMZI to achieve an operational position with high locking sensitivity, a coherent receiver to reduce the frequency-dependence of the locking sensitivity, and/or a temperature sensor and/or strain gauge to computationally correct for the effect of temperature or strain changes.

Described are various configurations of integrated wavelength lockers including asymmetric Mach-Zehnder interferometers (AMZIs) and associated detectors. Various embodiments provide improved wavelength-locking accuracy by using an active tuning element in the AMZI to achieve an operational position with high locking sensitivity, a coherent receiver to reduce the frequency-dependence of the locking sensitivity, and/or a temperature sensor and/or strain gauge to computationally correct for the effect of temperature or strain changes.

A hybrid single or multi-wavelength laser using an optical gain element, such as a semiconductor optical amplifier (SOA), for example a QD RSOA, and a semiconductor, e.g. silicon, photonics chip is demonstrated. A plurality, e.g. four, lasing modes at a predetermined, e.g. 2 nm, spacing and less than 3 dB power non-uniformity may be observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10.sup.9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

A wavelength variable light source includes a housing, a heat sink disposed in the housing, an excitation light source disposed on the heat sink and configured to output excitation light, a gain medium disposed on the heat sink and including an active layer and a lower DBR, a MEMS mechanism including a movable film facing the gain medium via a gap, disposed on the gain medium, and configured to control the gap, an upper DBR provided in the movable film and configuring a resonator together with the lower DBR, a reflector configured to reflect the excitation light output from the excitation light source toward the gain medium in the housing, and a window formed in the housing and configured to transmit light output from the gain medium.

Described are various configurations of integrated wavelength lockers including asymmetric Mach-Zehnder interferometers (AMZIs) and associated detectors. Various embodiments provide improved wavelength-locking accuracy by using an active tuning element in the AMZI to achieve an operational position with high locking sensitivity, a coherent receiver to reduce the frequency-dependence of the locking sensitivity, and/or a temperature sensor and/or strain gauge to computationally correct for the effect of temperature or strain changes.

A laser apparatus includes light source elements outputting laser beams; a wavelength-selecting element disposed in an optical path of each of the laser beams and configured to cause light in a predetermined wavelength band to selectively transmit therethrough; and a partially transmissive-reflector that receives the light transmitted through the wavelength-selecting element, reflects a part of the input light toward the wavelength-selecting element, and causes its remainder to transmit therethrough. The wavelength-selecting element causes a part of the respective laser beams output from the respective light source elements to selectively transmit therethrough, the partially transmissive-reflector reflects a part of the respective transmitted laser beams, and the wavelength-selecting element causes a part of the respective reflected laser beams to transmit to return to the light source elements, and each of the light source elements preferentially oscillates at a wavelength of the laser beam that transmits through the wavelength-selecting element.

A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.

A photonic crystal device includes a two-dimensional crystal including a gain medium and having a first photonic crystal resonator and a second photonic crystal resonator spaced apart from each other and a graphene layer disposed to cover a portion of the first photonic crystal resonator and not to cover the second photonic crystal resonator.

Described are various configurations of integrated wavelength lockers including asymmetric Mach-Zehnder interferometers (AMZIs) and associated detectors. Various embodiments provide improved wavelength-locking accuracy by using an active tuning element in the AMZI to achieve an operational position with high locking sensitivity, a coherent receiver to reduce the frequency-dependence of the locking sensitivity, and/or a temperature sensor and/or strain gauge to computationally correct for the effect of temperature or strain changes.