Patent classifications
H01S5/062
NARROW-PULSE-WIDTH PULSE LASER
The present disclosure provides a narrow-pulse-width pulse laser, including a circuit substrate, a laser chip, one or more capacitors, and a field effect transistor. Each of the field effect transistor, the capacitor, and the laser chip is electrically connected to the circuit substrate. The capacitors are arranged between the field effect transistor and the laser chip along an extension direction of a gap between the field effect transistor and the laser chip. The circuit substrate may include a first conductor layer; a second conductor layer; and an insulating layer arranged between the first conductor layer and the second conductor layer, wherein the first conductor layer and the second conductor layer are electrically connected through a via hole in the insulating layer.
MULTI-OCTAVE SPANNING MILLIMETER WAVE SOURCE WITH PHASE MEMORY
A synthesizer including a controller configured to receive a first signal. A digital-to-analog converter (DAC) is coupled to the controller and is configured to generate a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency. A semiconductor laser is coupled to the DAC and is configured to receive a second signal tone. The semiconductor laser generates a plurality of tone signals having octave multiples of a base sub-harmonic tone of the second signal tone.
MULTI-OCTAVE SPANNING MILLIMETER WAVE SOURCE WITH PHASE MEMORY
A synthesizer including a controller configured to receive a first signal. A digital-to-analog converter (DAC) is coupled to the controller and is configured to generate a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency. A semiconductor laser is coupled to the DAC and is configured to receive a second signal tone. The semiconductor laser generates a plurality of tone signals having octave multiples of a base sub-harmonic tone of the second signal tone.
Addressable vertical cavity surface emitting laser array for generating structured light patterns
An addressable vertical cavity surface emitting laser (VCSEL) array may generate structured light in dot patterns. The VCSEL array includes a plurality of traces that control different groups of VCSELs, such that each group of VCSELs may be individually controlled. The VCSEL groups are arranged such that they emit a dot pattern, and by modulating which groups of VCSELs are active a density of the dot pattern may be adjusted. The VCSEL array may be part of a depth projector that projects the dot pattern into a local area. A projection assembly may replicate the dot pattern in multiple tiles.
VCSEL device with multiple stacked active regions
Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.
TUNING ARRANGEMENT AND METHOD FOR TUNING
A tuning arrangement for a vertical-cavity surface-emitting laser (VCSEL) may include a delta sigma modulator and a current source. The delta sigma modulator may be configured to generate a bitstream comprising bit signals, and the current source may be configured to provide a current to the VCSEL in a switchable manner depending on a control signal. The bitstream is generated based on a target state signal and the control signal corresponds to or is derived from the bit signals of the bitstream.
AMPLIFIED LASER LIGHT WITH MULTIPLE OPTICAL AMPLIFIERS
A seed laser is configured to emit seed laser light. A plurality of optical amplifiers is configured to generate amplified laser light by amplifying the seed laser light. Each of the optical amplifiers is configured to separately direct its respective amplified laser light to a medium without being optically combined within the laser assembly with any of the other amplified laser light emitted by other optical amplifiers in the plurality of optical amplifiers.
DRIVING DEVICE, LIGHT EMITTING DEVICE, AND DRIVING METHOD
A driving device that includes a temperature monitoring circuit, a headroom voltage monitoring circuit, a power supply voltage monitoring circuit, and a control unit. The temperature monitoring circuit detects a temperature of a drive circuit that drives a light emitting element in a test light emission period of the light emitting element. The headroom voltage monitoring circuit detects a headroom voltage of the drive circuit in the test light emission period. The power supply voltage monitoring circuit detects a power supply voltage supplied to the light emitting element in the test light emission period. The control unit adjusts the power supply voltage in the test light emission period according to an input/output potential difference of the light emitting element varying depending on the temperature of drive circuit so as to obtain a headroom voltage necessary and sufficient for causing a prescribed drive current to flow through the light emitting element.
Semiconductor light-emitting module and control method therefor
A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.
Method for physical random number generation using a vertical cavity surface emitting laser
A method for physical random number generation includes the steps of: modulating the gain of a vertical-cavity surface-emitting laser periodically from the lower threshold to the upper threshold and back; maintaining the gain per round trip positive for a longer period than the round trip time of the cavity; maintaining the net gain per round trip negative for a longer period than the round trip time of the cavity, in order to create optical pulses of random amplitude; detecting the optical pulses; converting the optical pulses into electrical analog pulses; and digitising the electrical analog pulses into random numbers.