A laser apparatus includes: a laser unit including: a laser element unit including a phase adjusting portion configured to adjust an optical length of a laser resonator and enable frequency of laser light to be tuned; and a monitor unit configured to obtain a monitored value corresponding to the frequency of the laser light; a temperature controller configured to control temperature of the laser unit; and a control unit configured to execute: controlling the phase adjusting portion such that the monitored value is adjusted to a target monitored value corresponding to a target frequency set as the frequency of the laser light, while maintaining temperature set for the temperature controller constant; and controlling the temperature controller such that the frequency of the laser light is adjusted to the target frequency in a case where continuous fine adjustment control of the frequency of the laser light has been instructed.

A method (900) includes delivering a first bias current (I.sub.GAIN) to an anode of gain-section diode (590a) and delivering a second bias current (I.sub.PH) to an anode of a phase-section diode (590b). The method also includes receiving a burst mode signal (514) indicative of a burst-on state or a burst-on state, and sinking a first sink current (I.sub.SINK) away from the first bias current when the burst mode signal is indicative of the burst-off state. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method also includes sinking a second sink current away from the second bias current at the anode of the phase-section diode and ceasing the sinking of the first sink current away from the first bias current at the anode of the gain section diode.

A method (900) includes delivering a first bias current (I.sub.GAIN) to an anode of gain-section diode (590a) and delivering a second bias current (I.sub.PH) to an anode of a phase-section diode (590b). The method also includes receiving a burst mode signal (514) indicative of a burst-on state or a burst-on state, and sinking a first sink current (I.sub.SINK) away from the first bias current when the burst mode signal is indicative of the burst-off state. When the burst mode signal transitions to be indicative of the burst-on state from the burst-off state, the method also includes sinking a second sink current away from the second bias current at the anode of the phase-section diode and ceasing the sinking of the first sink current away from the first bias current at the anode of the gain section diode.

A light emitting element includes a laminated structure 20 in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are laminated, a first light reflecting layer 41, and a second light reflecting layer 42 having a flat shape, a base surface 90 located on a side of a first surface of the first compound semiconductor layer 21 has a first region 91 (upwardly convex first-A region 91A and first-B region 91B) including a protruding portion protruding in a direction away from the active layer and a second region 92 having a flat surface, the first light reflecting layer 41 is formed at least on the first-A region 91A, a second curve formed by the first-B region 91B and a straight line formed by the second region 92 intersects at an angle exceeding 0°, and the second curve includes at least one kind of figure selected from the group consisting of a combination of a downwardly convex curve, a line segment, and an arbitrary curve.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.

A semiconductor device includes: a base including a base surface; a mesa protruding from the base surface in a first direction intersecting the base surface, the mesa including a top surface and two side surfaces on both sides of the top surface, and extending along the base surface; and an electric resistor including a top wall provided on the top surface and a side wall provided on at least one of the two side surfaces, the electric resistor being configured such that a current flows in an extending direction of the mesa.

A method and apparatus provide for determining a temperature at a junction of a laser diode when the laser diode is operated in a lasing state that facilitates heat-assisted magnetic recording, comparing the junction temperature and an injection current supplied during the lasing state to stored combinations of junction temperature and injection current, and determining a likelihood of mode hopping occurring for the laser diode during the lasing state based on the comparison to stored combinations of junction temperature and injection current.

A driver circuit includes a fly capacitor with a first end and a second end. The driver circuit includes a laser diode having an anode and a cathode. The driver circuit is configured to operate in first and second operating states. The anode is coupled to the first end of the fly capacitor. In the first operating state, the cathode is coupled to a first voltage supply node, the first end of the fly capacitor is coupled to a second voltage supply node, and the second end of the fly capacitor is coupled to a first reference terminal. In the second operating state, the cathode is coupled to a second reference terminal and decoupled from the first voltage supply node, the first end of the fly capacitor is decoupled from the second voltage supply node, and the second end of the fly capacitor is coupled to a third reference terminal.

An optoelectronic device includes a laser diode having a cathode terminal and an anode terminal, which is connected to a driving voltage. A driver is coupled to drive current pulses through the laser diode from the anode terminal to the cathode terminal. A discharge switch has a first switch terminal connected to the cathode terminal and a second switch terminal connected to a discharge voltage, which is equal to or greater than the driving voltage, and is configured, when closed, to raise the cathode terminal to the discharge voltage. A switch control circuit has an input connected to the cathode terminal and an output connected to close the discharge switch in response to the current pulses occurring at the input.