The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.

In some implementations, a device may generate a data set including at least modal gain values and modal loss values for a semiconductor optical amplifier (SOA) slice. The device may determine, based on the data set, respective widths for a plurality of slices of an SOA using an autoregressive model. A width, of the respective widths, for a slice, of the plurality of slices, may be associated with a maximum conversion efficiency achievable for the slice at a given current density. The device may generate information indicating a geometry for the SOA based on the respective widths for the plurality of slices.

The invention relates to an optoelectronic laser device which includes: a first set of edge-emitting laser diodes, the first set of edge-emitting laser diodes having one or more first laser diodes, each of which has a first light emission region for laser light on a side face, and a second set of edge-emitting laser diodes, the second set of edge-emitting laser diodes having one or more second laser diodes, each of which has a second laser emission region for laser light on a side face, wherein the side faces of the first and second laser diodes lie at least substantially in the same plane, wherein a particular second laser diode (21b, 21d, 21f) is allocated to a particular first laser diode, and wherein the light emission regions of the first and of the allocated second laser diode are arranged at a distance from each other which is smaller than 10 μm, preferably smaller than 5 μm, further preferably smaller than 3 μm, and even further preferably smaller than 2 μm.

To realize a reservoir computing system with a small size and reduced learning cost, provided is a laser apparatus including a laser; a feedback waveguide that is operable to feed light output from the laser back to the laser; an optical splitter that is provided in a path of the feedback waveguide and is operable to output a portion of light propagated in the feedback waveguide to outside; and a first ring resonator that is operable to be optically connected to the feedback waveguide, as well as a reservoir computing system including this laser apparatus.

An optical semiconductor device includes a semiconductor multilayer structure, an active region interposed between a first facet on a light emitting side and a second facet opposing to the first facet, and a first electrode layer provided on a top of the semiconductor multilayer structure and a second electrode layer provided on a bottom of the semiconductor multilayer structure; and an electrical connection region connected to at least one of the first electrode layer and the second electrode layer of the optical semiconductor device and used for injecting a current to the active region, and α>β and β>0 are satisfied where α is the contact area included in a half region on the first facet side in a top area of the optical semiconductor device and β is the contact area included in a half region on the second facet side.

A semiconductor light-emitting element includes: a substrate; an n-type clad layer above the substrate; an active layer above the n-type clad layer; and a p-type clad layer above the active layer. The active layer includes: a well layer; an n-side first barrier layer on an n-type clad layer side of the well layer; and a p-side barrier layer on a p-type clad layer side of the well layer. The p-side barrier layer comprises In. The n-side first barrier layer has an In composition ratio lower than an In composition ratio of the p-side barrier layer. The n-side first barrier layer has a band gap energy smaller than a band gap energy of the p-side barrier layer.

A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.

A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.