A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a plurality of first columnar parts, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the light emitting layer constitute the first columnar parts, the first semiconductor layer is disposed between the substrate and the light emitting layer, the second semiconductor layer is provided with a plurality of recessed parts, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a plurality of the first columnar parts constitutes a first photonic crystal, the second semiconductor layer and the low refractive-index parts constitute a second photonic crystal, and the first photonic crystal and the second photonic crystal are optically coupled to each other.

A method of generating a light-matter hybrid species of charged polaritons at room temperature includes providing an organic semiconductor microcavity being a doped organic semiconductor sandwiched in a microcavity capable of generating an optical resonance and coupling light to the polaron optical transition in the organic semiconductor microcavity thereby forming polaron-polaritons. The doped organic semiconductor may be a hole/electron transport material having a polaron absorption coefficient exceeding 10.sup.2 cm.sup.−1 and capable of generating a polaron optical transition with a linewidth smaller than a predetermined threshold. The optical resonance of the microcavity has a resonance frequency matched with the polaron optical transition.

A method for numerical control milling, forming and polishing of a large-diameter aspheric lens to solve long time-consuming and severe tool wear in the machining of a meter-scale large-diameter aspheric surface is disclosed. An aspheric surface is discretized into a series of rings with different radii, and the rings are sequentially machined through generating cutting by using an annular grinding wheel tool; the rings are equally spaced, there are a total of N rings, and the width of any ring is jointly determined by the N.sup.th ring, the (N-1)th ring, positioning accuracy, and a generatrix equation of the aspheric lens, and the n.sup.th ring has a curvature radius of Rn =sqrt(R0.sup.2-k*(n*dx).sup.2); and the aspheric surface is enveloped by a large number of rings. The tool used for machining has a diameter greater than the semi-diameter of the aspheric surface, and contact area between tool and workpiece surface is rings.

A laser with a hexagonal semiconductor microdisk to solve the problems of a low quality factor of a hexagonal whispering-gallery mode and light exiting difficulty of a triangular whispering-gallery mode is disclosed. Based on physical characteristics of stimulated radiation of gain materials with a high refractive index, the apparatus uses a distributed Bragg reflection layer to reduce an optical loss of a microcavity laser, and uses a hexagonal semiconductor microdisk as an optical resonator and laser gain material. As an optical pump source, the laser provides an optical gain, and when the gain exceeds a microcavity laser threshold, generates laser light for exiting. By controlling a laser spot of the pump source to be located at a corner of the hexagonal microdisk, the laser light in a double-triangular whispering-gallery optical resonance mode is generated after stimulated radiation for exiting.

Disclosed is an optical probe system that is capable of high speed, high precision, and high resolution 3D digitalization of engineered objects. The 3D dimensional data of the engineered object is measured using a swept source optical coherence tomography system with improved speed, spatial resolutions, and depth range. Also disclosed is a type of coordinate measurement machine (CMM) that is capable of performing high speed, high resolution, and non-contact measurement of engineered objects. The mechanic stylus in the touch-trigger probe of a conventional CMM is replaced with an optical stylus with reconfigurable diameter and length. The distance from the center of the optical stylus to the measurement probe is optically adjusted to match the height of the object to be measured quickly, which eliminates one dimensional movement of the probe and greatly improves the productivity.

A light emitting apparatus includes a laminate including a columnar section. The columnar section includes an n-type semiconductor layer, a first p-type semiconductor layer, a light emitting layer provided between the n-type semiconductor layer and the first p-type semiconductor layer, and a second p-type semiconductor layer in contact with the first p-type semiconductor layer. The first p-type semiconductor layer is provided between the light emitting layer and the second p-type semiconductor layer. The first p-type semiconductor layer has a c-plane and a facet surface. The second p-type semiconductor layer has a c-plane region provided at the c-plane and a facet-surface region provided at the facet surface. The c-plane region has negatively polarized charges at an interface with the first p-type semiconductor layer. The facet-surface region has positively polarized charges at the interface.

A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

A light emitting device according to the present disclosure includes a substrate, and a columnar structure group formed of a plurality of columnar structures, wherein the plurality of columnar structures includes a plurality of first columnar structures disposed in a light emitting section, and a plurality of second columnar structures disposed in a region other than the light emitting section, the columnar structure group includes a first columnar structure group including the plurality of first columnar structures and a light propagation layer, and a second columnar structure group including the plurality of second columnar structures and an insulating layer, an inter-layer insulating layer configured to cover the columnar structure groups is disposed on the substrate, a conductive layer to be electrically coupled to the first columnar structure group is disposed on the inter-layer insulating layer, a first electrode terminal electrically coupled to the conductive layer is disposed on the inter-layer insulating layer, the first columnar structures are constituted by a first semiconductor layer, a second semiconductor layer, and a light emitting layer, the conductive layer is electrically coupled to the second semiconductor layer, and when viewed from a normal direction of the substrate, the conductive layer and the first electrode terminal overlap the second columnar structure group.

An optical resonance structure is provided. For example, an optical resonator may operate based on a single-material double-layer HCG resonance structure. The optical resonator includes a first member and a second member. Each of the first member and the second member has a high contrast grating (HCG) structure, and a refractive index of the first member and a refractive index of the second member are the same.