Patent classifications
H01S5/1046
PLASMONIC MODE III-V LASER AS ON-CHIP LIGHT SOURCE
A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.
LASER RESONATOR AND LASER RESONATOR ARRAY
Provided is a laser resonator for generating a laser light by absorbing energy from outside. The laser resonator includes a metal body and a gain medium layer having a ring shape. The gain medium layer of a ring shape may be provided on the metal body and may generate the laser light by a plasmonic effect.
Laser on silicon made with 2D material gain medium
A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.
Oscillation device and measurement apparatus using the same
An oscillation device includes a waveguide structure including a first conductor layer, a second conductor layer, and a semiconductor layer disposed between the first conductor layer and the second conductor layer and having a gain of an electromagnetic wave, an antenna unit configured to radiate the electromagnetic wave, a first connecting portion configured to connect the waveguide structure and the antenna unit, and a second connecting portion configured to connect the waveguide structure and the antenna unit. A first connecting position of the first connecting portion and the waveguide structure and a second connecting position of the second connecting portion and the waveguide structure are different from each other in a resonance direction in which the electromagnetic wave that resonates the waveguide structure resonates.
Waveguide embedded plasmon laser with multiplexing and electrical modulation
This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.
Enhanced photoluminescence from plasmonic apparatus with two resonant cavity wavelengths
Embodiments include a gain system and method. The system includes a gain medium with a plurality of plasmonic apparatus. Each plasmonic apparatus includes a substrate having a first plasmonic surface, a plasmonic nanoparticle having a second plasmonic surface, and a dielectric-filled gap between the first plasmonic surface and the second plasmonic surface. A plasmonic cavity is created by an assembly of the first plasmonic surface, the second plasmonic surface, and the dielectric-filled gap, and has a first fundamental wavelength .sub.1 and second fundamental wavelength .sub.2. Fluorescent particles are located in the dielectric-filled gap. Each fluorescent particle has an absorption spectrum at the first fundamental wavelength .sub.1 and an emission spectrum at the second fundamental wavelength .sub.2. An excitation applied to the gain medium at the first fundamental wavelength .sub.1 produces an amplified electromagnetic wave emission at the second resonant wavelength .sub.2.
Enhanced photoluminescence
Embodiments include a gain system and method. The system includes a gain medium with a plurality of plasmonic apparatus. Each plasmonic apparatus includes a substrate having a first plasmonic surface, a plasmonic nanoparticle having a second plasmonic surface, and a dielectric-filled gap between the first plasmonic surface and the second plasmonic surface. A plasmonic cavity is created by an assembly of the first plasmonic surface, the second plasmonic surface, and the dielectric-filled gap, and has a first fundamental wavelength .sub.1 and second fundamental wavelength .sub.2. Fluorescent particles are located in the dielectric-filled gap. Each fluorescent particle has an absorption spectrum at the first fundamental wavelength .sub.1 and an emission spectrum at the second fundamental wavelength .sub.2. An excitation applied to the gain medium at the first fundamental wavelength .sub.1 produces an amplified electromagnetic wave emission at the second resonant wavelength .sub.2.
Plasmonic mode III-V laser as on-chip light source
A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.
Antenna feedback scheme for achieving narrow beam emission from plasmonic lasers
A distributed antenna-coupling feedback scheme and specially designed distributed feedback (DFB) metallic cavity and grating for laser application and in particular to plasmonic lasers ensuring a predesigned phase condition such that a mode traveling inside a waveguide is coupled/phase-locked to a mode traveling on the top metal improving the beam quality of the laser.
PLASMONIC MODE III-V LASER AS ON-CHIP LIGHT SOURCE
A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.