An optical resonator device, which can be implemented in a Brillouin laser, comprises a first waveguide ring resonator having a first diameter, and one or more second waveguide ring resonators adjacent to the first waveguide ring resonator. The one or more second waveguide ring resonators each have a second diameter that is less than the first diameter. The one or more second waveguide ring resonators optically communicate with the first waveguide ring resonator, such that an optical signal in the first waveguide ring resonator optically couples into the one or more second waveguide ring resonators. The one or more second waveguide ring resonators is configured such that when the optical signal resonates within the first waveguide ring resonator and the one or more second waveguide ring resonators, the optical signal within the first waveguide ring resonator is suppressed.

A topological laser system is described. The laser system comprises an array of optical elements arranged in an array and coupled between them such that the array is configured for supporting one or more topological modes. The plurality of optical elements comprises optical elements carrying gain material configured for emitting optical radiation in response to pumping energy. The laser system further comprises a pumping unit configured to provide pumping of a group of the optical elements of the array within at least a portion of the spatial region corresponding with said topological mode; and at least one output port optically coupled to one or more of the optical elements associated with said topological mode. The at least one output ports is configured for extracting a portion of light intensity from said laser system.

An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.

A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: $\underset{n=1}{\overset{N_2}{.Math.}}{L}_{2,n}{\mathrm{neff}}_{2,n}-\underset{n=1}{\overset{N_1}{.Math.}}{L}_{1,n}{\mathrm{neff}}_{1,n}=k_f{\lambda }_{\mathrm{Si}}$
where: k.sub.f is a preset integer number higher than or equal to 1, N.sub.1 and N.sub.2 are the numbers of sections in the first and second arms, respectively, L.sub.1,n and L.sub.2,n are the lengths of the nth sections of the first and second arms, respectively, neff.sub.1,n and neff.sub.2,n are the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

A vertical cavity surface emitting laser (VCSEL) array, comprising: a first sub-array includes a plurality of VCSEL units arranged along a first axis, and wherein the first sub-array includes: a first VCSEL unit includes a first upper contact and a first bottom contact; and a second VCSEL unit includes a second upper contact and a second bottom contact; a first contact electrically connected to the first upper contact and the second bottom contact; and a second contact electrically connected to the second upper contact and the first bottom contact, wherein the first VCSEL unit is operated when a first voltage is applied to the first contact and a second voltage smaller than the first voltage is applied to the second contact, and wherein the second VCSEL unit is operated when the second voltage is applied to the first contact and the first voltage is applied to the second contact.

An apparatus includes a wavelength-tunable laser and an electronic controller. The electronic controller is configured to control the wavelength-tunable laser such that an output wavelength of the wavelength-tunable laser performs a zigzag in time. The wavelength-tunable laser is capable of rapidly and densely scanning wavelengths across a broad spectral range.

Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source configured to emit light having different wavelengths, a waveguide, and an optical coupler configured to couple the emitted light from the first optical source to the waveguide. The optical transmitter further includes an array of two or more second optical sources coupled to the waveguide, each of the two or more second optical sources configured to be injection locked to a different respective wavelength of the emitted light transmitted via the waveguide from the first optical source. In some implementations, the first optical source is a master comb laser and the two or more second optical sources are slave ring lasers.

The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.

The present disclosure discloses a narrow-linewidth laser. The narrow-linewidth laser comprises a passive ring waveguide, a first passive input/output waveguide which is coupled with the passive ring waveguide, a gain wavelength-selection unit which is used for providing gain for the whole laser and is configured to be capable of selecting the light with a specific wavelength to be coupled into the passive ring waveguide, and a second passive input/output waveguide which is coupled with the passive ring waveguide in order to output lasing light from the laser. The narrow-linewidth semiconductor laser provided by the present disclosure has a simple structure and does not have butt-joint coupling loss between a gain region and a waveguide external cavity region. There is no a linewidth limitation caused by butt-coupling loss in such semiconductor lasers. Moreover, because of the integral formation semiconductor technique, the laser should have low cost, higher stability and reliability, and higher resistance to severe environment. Furthermore, based on a loss compensation structure, a ring external cavity of the laser can work in a critical coupling state under different coupling coefficients. Therefore, the laser with a narrow linewidth and a high side-mode suppression ratio should be achieved.

A method for generating single optical pulses of picosecond-range duration with suppressed transient emission tails.