Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.

Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.

A semiconductor laser including: a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate; and a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface.

A semiconductor laser device includes a semiconductor substrate, a resonator unit formed on the semiconductor substrate and having an active layer, a diffraction grating formed on or underneath the active layer, a front facet of an inverted mesa slope, and a rear facet, an anti-reflection coating film formed on the front facet, a reflective film formed on the rear facet, an upper electrode formed on the resonator unit, and a lower electrode formed underneath the semiconductor substrate, wherein a length in a resonator direction of the resonator unit is shorter than a length in the resonator direction of the semiconductor substrate, and a laser beam is emitted from the front facet.

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

A grating based optical transmitter includes a light source region coupled to an interference region, two reflective regions on both sides of the interference region, and one or several gratings interacting with the interference light wave in the interference region causing a vertical emission. Two electrodes are used to inject electrical carriers, and a third electrode can be added to modulate the electrical carrier density recombined in the light source region. Compared to conventional edge-emitting laser with two electrodes, the grating-based optical transmitter in this invention largely reduces the packaging cost and complexity due to the vertical emission, and largely enhances the modulation bandwidth due to the three-terminal configuration.

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

A method of preparing a distributed feedback laser. The distributed feedback laser comprises an active waveguide with a reflective facet. The method comprises: etching a grating into the distributed feedback laser; and etching an output facet into the active waveguide.

A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.