A system including a laser. In some embodiments, the system includes a semiconductor laser, configured to generate laser light at an operating wavelength. The semiconductor laser may include: an optical waveguide including a gain medium; a first facet, at a first end of the optical waveguide; a second facet, at a second end of the optical waveguide; and a first reflector, in the optical waveguide, between the first facet and the second facet. The first reflector may be a discrete reflector.

In an embodiment a method for manufacturing a light-emitting semiconductor chip includes providing a substrate having a main surface with at least one recess, the main surface having a main extension plane along the longitudinal direction and along a transversal direction perpendicular to the longitudinal direction, wherein the substrate has pre-patterning trenches formed along the transversal direction between chip regions and extending along the longitudinal direction, growing the semiconductor layer sequence on the main surface with the at least one recess and forming at least one facet aligned along the transversal direction in the semiconductor layer sequence by an etching process, wherein the facet has a distance of less than or equal to 50 ?m from the at least one recess in at least one direction parallel to the main extension plane of the main surface.

Techniques for providing curved facet semiconductor lasers. are disclosed. In one particular embodiment, the techniques may be realized as a semiconductor laser, comprising a waveguide, wherein the waveguide includes a facet formed at an edge of the semiconductor laser, and the facet has a curvature.

An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

A semiconductor laser including: a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate; and a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface.

A semiconductor laser resonator configured to generate a laser beam includes a gain medium layer including a semiconductor material and comprising at least one protrusion formed by at least one trench to protrude in an upper portion of the gain medium layer. In the semiconductor laser resonator, the at least one protrusion is configured to confine the laser beam as a standing wave in the at least one protrusion.

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

A folded lasing cavity comprises at least one bend. The folded lasing cavity is disposed on and configured to emit light along a substrate-parallel plane. An etched facet is on an emitting end of the folded lasing cavity and an etched mirror is on another end of the folding lasing cavity. An etched shaping mirror redirects light received from the etched facet in a direction normal to the substrate-parallel plane.