A surface-emitting semiconductor laser based on a triple-lattice photonic crystal structure, including: a P-type electrode, a P-type contact layer, a P-type cladding layer, a photonic crystal layer, an active layer, an N-type cladding layer, an N-type contact layer, an N-type substrate, and an N-type electrode successively arranged from top to bottom. The photonic crystal layer has a triple-lattice photonic crystal structure, which is formed by a plurality of square unit cells arranged periodically. Each square unit cell includes three identical air holes, namely, a first air hole, a second air hole, and a third air hole. A distance between a center of the first air hole and a center of the second air hole is (0.5±0.1) a, and a distance between a center of the third air hole and the center of the second air hole is (0.5±0.1) a, where a is the lattice constant.

A surface-emitting semiconductor laser based on a triple-lattice photonic crystal structure, including: a P-type electrode, a P-type contact layer, a P-type cladding layer, a photonic crystal layer, an active layer, an N-type cladding layer, an N-type contact layer, an N-type substrate, and an N-type electrode successively arranged from top to bottom. The photonic crystal layer has a triple-lattice photonic crystal structure, which is formed by a plurality of square unit cells arranged periodically. Each square unit cell includes three identical air holes, namely, a first air hole, a second air hole, and a third air hole. A distance between a center of the first air hole and a center of the second air hole is (0.5±0.1) a, and a distance between a center of the third air hole and the center of the second air hole is (0.5±0.1) a, where a is the lattice constant.

In an optical device, a first semiconductor layer and a second semiconductor layer are formed to be thinner than a core, an active layer has a shape with an end in a waveguide direction tapers toward a tip end, the first semiconductor layer having a trapezoidal shape with a width thereof decreases toward a side of a third semiconductor layer from a side of the core in a plan view and a width thereof decreases as one end in the waveguide direction recedes from a central portion of the active region, and the second semiconductor layer having a trapezoidal shape with a width thereof decreases toward a side of a fourth semiconductor layer from the side of the core in a plan view and a width thereof decreases as one end in the waveguide direction recedes from the central portion of the active region.

In an optical device, a first semiconductor layer and a second semiconductor layer are formed to be thinner than a core, an active layer has a shape with an end in a waveguide direction tapers toward a tip end, the first semiconductor layer having a trapezoidal shape with a width thereof decreases toward a side of a third semiconductor layer from a side of the core in a plan view and a width thereof decreases as one end in the waveguide direction recedes from a central portion of the active region, and the second semiconductor layer having a trapezoidal shape with a width thereof decreases toward a side of a fourth semiconductor layer from the side of the core in a plan view and a width thereof decreases as one end in the waveguide direction recedes from the central portion of the active region.

A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

In a general aspect, a communication system comprises a first station and a second station. The first station includes a photonic crystal maser, a laser subsystem, and a tracking subsystem. A photonic crystal structure of the photonic crystal maser is formed of dielectric material and has an array of cavities and an elongated slot. The elongated slot is disposed in a defect region of the array of cavities. The photonic crystal maser also includes a vapor disposed in the elongated slot and operable to emit a target RF electromagnetic radiation in response to receiving an optical signal. The array of cavities and the elongated slot define a waveguide configured to form the target RF electromagnetic radiation, when emitted, into a beam. The second station includes a receiver configured to couple to the beam of target RF electromagnetic radiation.

In a general aspect, a communication system comprises a first station and a second station. The first station includes a photonic crystal maser, a laser subsystem, and a tracking subsystem. A photonic crystal structure of the photonic crystal maser is formed of dielectric material and has an array of cavities and an elongated slot. The elongated slot is disposed in a defect region of the array of cavities. The photonic crystal maser also includes a vapor disposed in the elongated slot and operable to emit a target RF electromagnetic radiation in response to receiving an optical signal. The array of cavities and the elongated slot define a waveguide configured to form the target RF electromagnetic radiation, when emitted, into a beam. The second station includes a receiver configured to couple to the beam of target RF electromagnetic radiation.

A two-dimensional topological photonic crystal cavity, a design method thereof and an application in a laser. The two-dimensional topological photonic crystal cavity comprises multiple photonic crystal supercells, the multiple photonic crystal supercells having vortex-shaped structural variation around a center of the two-dimensional topological photonic crystal cavity, and bands of the multiple photonic crystal supercells having Dirac points at balance positions of the vortex-shaped structural variation. The two-dimensional topological photonic crystal cavity, also called the Dirac vortex cavity, is characterized by having large mode field area, large free spectral range, narrow beam divergence angle, arbitrary mode degeneracy and compatibility with plurality of types of substrate material, and may be used in a surface-emitting semiconductor laser, enabling stable single-transverse-mode and single-longitudinal-mode operation, while ensuring broad-area and high-power output of a laser.

A two-dimensional topological photonic crystal cavity, a design method thereof and an application in a laser. The two-dimensional topological photonic crystal cavity comprises multiple photonic crystal supercells, the multiple photonic crystal supercells having vortex-shaped structural variation around a center of the two-dimensional topological photonic crystal cavity, and bands of the multiple photonic crystal supercells having Dirac points at balance positions of the vortex-shaped structural variation. The two-dimensional topological photonic crystal cavity, also called the Dirac vortex cavity, is characterized by having large mode field area, large free spectral range, narrow beam divergence angle, arbitrary mode degeneracy and compatibility with plurality of types of substrate material, and may be used in a surface-emitting semiconductor laser, enabling stable single-transverse-mode and single-longitudinal-mode operation, while ensuring broad-area and high-power output of a laser.