A surface-emitting semiconductor light-emitting device includes a semiconductor substrate; a first semiconductor layer on a front surface of the semiconductor substrate, an active layer on the first semiconductor layer; a photonic crystal layer on the active layer, a second semiconductor layer on the photonic crystal layer, a first electrode on the second semiconductor layer; and a second electrode on a back surface of the semiconductor substrate. The photonic crystal layer includes a plurality of protrusions arranged along an upper surface of the active layer. The second electrode includes a planar contact portion contacting the back surface of the semiconductor substrate, and at least one fine wire contact portion extending into a surface-emitting region in the back surface of the semiconductor substrate. The light radiated from the active layer is externally emitted from the surface-emitting region. The fine wire contact portion is arranged in the surface-emitting region with rotationally asymmetric.

A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

An optical device includes a first reflecting section, a second reflecting section, and a confining section. The first reflecting section is constituted of a thin-wire waveguide-type one-dimensional photonic crystal. The second reflecting section is constituted of a thin-wire waveguide-type one-dimensional photonic crystal of which a lattice constant differs from that of the first reflecting section. The confining section is sandwiched between the first reflecting section and the second reflecting section. A Fabry-Perot optical resonator is constituted by the first reflecting section, the confining section, and the second reflecting section.

An optical device includes a first reflecting section, a second reflecting section, and a confining section. The first reflecting section is constituted of a thin-wire waveguide-type one-dimensional photonic crystal. The second reflecting section is constituted of a thin-wire waveguide-type one-dimensional photonic crystal of which a lattice constant differs from that of the first reflecting section. The confining section is sandwiched between the first reflecting section and the second reflecting section. A Fabry-Perot optical resonator is constituted by the first reflecting section, the confining section, and the second reflecting section.

An analysis device includes a substrate including a first surface, and a second surface positioned at a side opposite to the first surface; a light source part located at the first surface of the substrate, the light source part including a quantum cascade laser; a light detector located at the first surface of the substrate; and a wiring part located at the first surface of the substrate, the wiring part being electrically connected with the light source part and the light detector.

An analysis device includes a substrate including a first surface, and a second surface positioned at a side opposite to the first surface; a light source part located at the first surface of the substrate, the light source part including a quantum cascade laser; a light detector located at the first surface of the substrate; and a wiring part located at the first surface of the substrate, the wiring part being electrically connected with the light source part and the light detector.

A two-dimensional photonic-crystal laser formed by sandwiching, between a first electrode and a second electrode, a layered body including an active layer and a two-dimensional photonic-crystal layer in which modified refractive index areas having a refractive index different from a refractive index of a plate-shaped base body are periodically arranged two-dimensionally on the base body. The first electrode is divided into a plurality of partial electrodes, and the second electrode is a frame-shaped electrode including a frame-shaped portion made of a conductor, the second electrode having a window portion which is a space inside the frame-shaped portion being arranged to face a region enclosing a plurality of the partial electrodes. A lens provided on the side opposite to the layered body of the second electrode in a manner covering the entire window portion is included.

A two-dimensional photonic-crystal laser formed by sandwiching, between a first electrode and a second electrode, a layered body including an active layer and a two-dimensional photonic-crystal layer in which modified refractive index areas having a refractive index different from a refractive index of a plate-shaped base body are periodically arranged two-dimensionally on the base body. The first electrode is divided into a plurality of partial electrodes, and the second electrode is a frame-shaped electrode including a frame-shaped portion made of a conductor, the second electrode having a window portion which is a space inside the frame-shaped portion being arranged to face a region enclosing a plurality of the partial electrodes. A lens provided on the side opposite to the layered body of the second electrode in a manner covering the entire window portion is included.

Provided is a surface emitting quantum cascade laser, including: semiconductor layers other than a laser active layer and the laser active layer; and a square-lattice or rectangular-lattice photonic crystal on the laser active layer, wherein a unit lattice of the square-lattice or rectangular-lattice photonic crystal is made of a composition A, and a composition B having a refractive index different from a refractive index of the composition A, and wherein the composition A is a compound semiconductor composition or metal composition, the composition B is a compound semiconductor composition, and the unit lattice of the square-lattice or rectangular-lattice photonic crystal has the following structure: a columnar structure body having a pentagonal bottom face and being made of the composition B is provided in a central part of the columnar structure body having the square or rectangular bottom face and being made of the composition A.