Provided is a surface emitting quantum cascade laser, including: semiconductor layers other than a laser active layer and the laser active layer; and a square-lattice or rectangular-lattice photonic crystal on the laser active layer, wherein a unit lattice of the square-lattice or rectangular-lattice photonic crystal is made of a composition A, and a composition B having a refractive index different from a refractive index of the composition A, and wherein the composition A is a compound semiconductor composition or metal composition, the composition B is a compound semiconductor composition, and the unit lattice of the square-lattice or rectangular-lattice photonic crystal has the following structure: a columnar structure body having a pentagonal bottom face and being made of the composition B is provided in a central part of the columnar structure body having the square or rectangular bottom face and being made of the composition A.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.

The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.

In a general aspect, a photonic crystal maser includes a dielectric body having an array of cavities ordered periodically to define a photonic crystal structure in the dielectric body. The dielectric body also includes a region in the array of cavities defining a defect in the photonic crystal structure. An elongated slot through the region extends from a slot opening in a surface of the dielectric body at least partially through the dielectric body. The elongated slot and the array of cavities define a waveguide of the dielectric body. The dielectric body additionally includes an input coupler aligned with an end of the elongated slot and configured to couple a reference radiofrequency (RF) electromagnetic radiation to the waveguide. The photonic crystal maser also includes a vapor or source of the vapor in the elongated slot and an optical window covering the elongated slot.

In a general aspect, a photonic crystal maser includes a dielectric body having an array of cavities ordered periodically to define a photonic crystal structure in the dielectric body. The dielectric body also includes a region in the array of cavities defining a defect in the photonic crystal structure. An elongated slot through the region extends from a slot opening in a surface of the dielectric body at least partially through the dielectric body. The elongated slot and the array of cavities define a waveguide of the dielectric body. The dielectric body additionally includes an input coupler aligned with an end of the elongated slot and configured to couple a reference radiofrequency (RF) electromagnetic radiation to the waveguide. The photonic crystal maser also includes a vapor or source of the vapor in the elongated slot and an optical window covering the elongated slot.

A photonic crystal device to be used for trapping an atom and including a photonic crystal body, a slot waveguide, and an attractive force trap light laser. The photonic crystal body includes a base and a plurality of lattice elements periodically provided on the base, the slot waveguide is arranged between periodic lattice rows and includes an opening on one side face of the photonic crystal body, and the attractive force trap light laser is excited by excitation light incident from the opening and oscillates at a wavelength being longer than a wavelength of an absorption edge of the atom.

A photonic crystal device to be used for trapping an atom and including a photonic crystal body, a slot waveguide, and an attractive force trap light laser. The photonic crystal body includes a base and a plurality of lattice elements periodically provided on the base, the slot waveguide is arranged between periodic lattice rows and includes an opening on one side face of the photonic crystal body, and the attractive force trap light laser is excited by excitation light incident from the opening and oscillates at a wavelength being longer than a wavelength of an absorption edge of the atom.

An active region formed on a substrate, and a p-type region and an n-type region formed so as to sandwich the active region are provided. The p-type region and the n-type region are formed so as to sandwich the active region. Both edges of a first side being a side of the p-type region and facing a first side surface of the active region are rounded in a direction separating from the active region. Also, both edges of a second side being a side of the n-type region and facing a second side surface of the active region are rounded in a direction separating from the active region.

The present disclosure relates to an optical amplifier configured for an image capturing device. The optical amplifier may include a substrate. The optical amplifier may also include an optical amplification region formed over the substrate. The optical amplification region may include a first optical amplification layer and a second optical amplification layer. The first optical amplification layer may be configured to amplify light at a first wavelength range, and the second optical amplification layer may be configured to amplify light at a second wavelength range. The optical amplifier may further include at least one electrode layer electrically contacting the optical amplification region.