In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.

The present disclosure discloses an optical module including a circuit board and a light-emitting assembly. In the light-emitting assembly, a wavelength tuning mechanism is formed of a semiconductor optical amplification chip, a silicon optical chip and a semiconductor refrigerator. The semiconductor optical amplification chip may provide a plurality of wavelengths, and a wavelength selection is carried out by an optical filter in the silicon optical chip; a temperature adjustment for the optical filter is achieved by the semiconductor refrigerator, so as to further adjust a performance of the filter for wavelength selection. The above device is provided in a housing to facilitate packaging of the devices.

Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1≤R≤R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror.

Provided is a semiconductor laser element including: a resonator structure; and a first reflection film and a second reflection film provided on a non-emission end surface of the resonator structure and an emission end surface of the resonator structure, respectively. Reflectance R of the second reflection film at a gain wavelength satisfies the following relational expression: R1≤R≤R(Oc)×C where R1 is reflectance of the second reflection film when the resonator structure performs laser oscillation with power 1.4 times a minimum value of threshold power which is minimum power for the resonator structure to perform the laser oscillation, R(Oc) is reflectance of the external resonance mirror, and C is a ratio of light, which is reflected by the external resonance mirror and is incident in the resonator structure, to light which is reflected by the external resonance mirror.

A tunable laser assembly uses a fundamental wavelength between 1 μm and 1.1 μm to alternately generate laser output light at two or more output wavelengths within the range of 184 nm to 200 nm by directing the fundamental light through different regions of a fan-out periodically poled nonlinear crystal to generate corresponding different down-converted signals, and using different nonlinear summing crystals to mix the different down-converted signals with a fifth harmonic of the fundamental wavelength. Each nonlinear summing crystal has a crystal axis aligned at an angle relative to the light propagation direction to facilitate the efficient transmission and summing of the fifth harmonic with an associated down-converted signal. In response to a user-selected output wavelength, a frequency control system positions the fan-out periodically poled nonlinear crystal to generate a corresponding down-converted signal frequency and positions an associated nonlinear summing crystal to receive the fifth harmonic and the corresponding down-converted signal.

A synthesizer includes a first resonator mirror, a second resonator mirror, and a gain medium disposed within a laser resonator cavity defined by the first resonator mirror and the second resonator mirror. The synthesizer includes a saturable absorber operationally coupled to the gain medium and having active control such that the saturable absorber is configured to generate a waveform via an injection locking signal to create a mode locking effect, the waveform having a frequency comb defined by dimensions of the gain medium. The synthesizer also includes a crystal electro-optical modulator disposed within the laser resonator cavity. The waveform passes through the modulator to impinge on a photodiode to output an emission RF waveform. Changing the voltage applied to the modulator changes the index of refraction of the modulator, altering an optical path length of the laser resonator cavity to adjust a frequency of the emission RF waveform.

A synthesizer includes a first resonator mirror, a second resonator mirror, and a gain medium disposed within a laser resonator cavity defined by the first resonator mirror and the second resonator mirror. The synthesizer includes a saturable absorber operationally coupled to the gain medium and having active control such that the saturable absorber is configured to generate a waveform via an injection locking signal to create a mode locking effect, the waveform having a frequency comb defined by dimensions of the gain medium. The synthesizer also includes a crystal electro-optical modulator disposed within the laser resonator cavity. The waveform passes through the modulator to impinge on a photodiode to output an emission RF waveform. Changing the voltage applied to the modulator changes the index of refraction of the modulator, altering an optical path length of the laser resonator cavity to adjust a frequency of the emission RF waveform.

A tunable laser includes a reflective semiconductor optical amplifier (SOA), a grating codirectional coupler, and a reflective microring resonator. The grating codirectional coupler and the reflective microring resonator are both formed on a silicon base. An anti-reflection film is disposed on a first end surface of the reflective SOA, and the first end surface is an end surface, coupled to a first waveguide of the grating codirectional coupler, of the reflective SOA. A second waveguide of the grating codirectional coupler is coupled to the first waveguide, a first grating is disposed on the first waveguide, a second grating disposed opposite to the first grating is disposed on the second waveguide, and the first grating and the second grating constitute a narrow-band pass filter. The second waveguide is connected to the reflective microring resonator.

A method or apparatus for narrowing the linewidth of a single mode laser is provided. The linewidth of a single mode laser is narrowed by injecting an optical feedback simultaneously into the first laser cavity mirror and the second laser cavity mirror of the single mode laser.

A laser. In some embodiments, the laser includes an optical amplifier, and an output reflector. The output reflector may be configured to receive light from the optical amplifier and to reflect light at a first wavelength back toward the optical amplifier. The output reflector may include a wavelength-selective element, and a coupler configured to receive the light from the optical amplifier and to couple a portion of the light to the wavelength-selective element.