Patent classifications
H01S5/14
OPTOELECTRONIC SEMICONDUCTOR LASER COMPONENT AND OPTOELECTRONIC ARRANGEMENT
An optoelectronic semiconductor laser component may include at least two laser units. The semiconductor laser component may have an output coupling surface configured to generate electromagnetic radiation in the semiconductor laser component. Each laser unit may include a laser resonator having a resonator axis, an output coupling mirror and a first and a second resonator mirror with a primary section of the resonator axis running laterally therebetween. The output coupling mirror may be formed by a partial region of the output coupling surface. Along the primary section of the resonator axis at least one contact strip is arranged on the output coupling surface, and extends to a metallic connection surface. The laser units may be aligned in such a way that the primary sections of the resonator axes run parallel to one another and the output coupling mirrors face one another.
CONDENSATION PREVENTION FOR HIGH-POWER LASER SYSTEMS
In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.
LASER DIODE SYSTEM WITH LOW NUMERICAL APERTURE CLAD LIGHT STRIPPING
Some embodiments may include a packaged laser diode assembly, comprising: a length of optical fiber having a core and a cladding layer, the length of optical fiber having a first section and a second section, the first section of the length of optical fiber including a tip of an input end of the optical fiber; one or more laser diodes to generate laser light; one or more optical components to direct a beam derived from the laser light into the input end of the length of optical fiber; a clad light stripper on the second section of the length of optical fiber; wherein, in the first section of the length of optical fiber, the cladding layer includes: a light scattering feature at the tip of the input end of the optical fiber and/or a void along a length of the optical fiber.
EXTERNAL RESONANT LASER MODULE AND METHOD OF MANUFACTURING EXTERNAL RESONANT LASER MODULE
The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The fourth mounting portion of the mount member is provided with a placement hole into which the protruding portion of the diffraction grating unit is inserted. The placement hole is longer than the protruding portion so that the protruding portion can be slid in the X-axis direction relative to the placement hole. A wall surface for positioning the diffraction grating unit is provided between the third mounting portion and the fourth mounting portion. The diffraction grating unit includes a positioning surface facing the wall surface. The diffraction grating unit is fixed to the fourth mounting portion in a state where the protruding portion is inserted into the placement hole and the positioning surface is in surface contact with the wall surface.
Self-Mixing Interference Device with Tunable Microelectromechanical System
Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.
Self-Mixing Interference Device with Tunable Microelectromechanical System
Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.
EXTERNAL RESONANT LASER MODULE
The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The first mounting portion has a first top surface on which the first lens holder is mounted via an adhesive layer. The third mounting portion has a third top surface on which the second lens holder is mounted via an adhesive layer. The second mounting portion has a second top surface located higher than the first top surface and the third top surface, a first side surface connecting the second top surface and the first top surface, and a second side surface connecting the second top surface and the third top surface. A notch extending from the second top surface to the first top surface or the third top surface is formed in at least one of the first side surface and the second side surface.
MULTI-OCTAVE SPANNING MILLIMETER WAVE SOURCE WITH PHASE MEMORY
A synthesizer including a controller configured to receive a first signal. A digital-to-analog converter (DAC) is coupled to the controller and is configured to generate a voltage bias based on the first signal. The voltage bias corresponds to a target resonant frequency. A semiconductor laser is coupled to the DAC and is configured to receive a second signal tone. The semiconductor laser generates a plurality of tone signals having octave multiples of a base sub-harmonic tone of the second signal tone.
LASER DEVICE, METHOD OF MANUFACTURING LASER DEVICE, LASER APPARATUS, AND LASER AMPLIFYING DEVICE
[Object] To provide a compact and high-performance laser device and a laser apparatus.
[Solving Means] A laser device according to the present disclosure includes an excitation light source having a first reflective layer with respect to a first wavelength; a laser medium having a second reflective layer with respect to a second wavelength on a first surface facing to the excitation light source and a third reflective layer with respect to the first wavelength on a second surface opposite to the first surface; and a saturable absorber having a fourth reflective layer with respect to the second wavelength on a third surface opposite to the laser medium.
Generation of high-power spatially-restructurable spectrally-tunable beams in a multi-arm-cavity VECSEL-based laser system
A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution.