An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

A photonic crystal surface-emitting laser includes a light emitting module and a driving module. The light emitting module includes a photonic crystal layer, an active light emitting layer on a side of the photonic crystal layer, a first electrode on a side of the active light emitting layer facing away from the photonic crystal layer, and a second electrode partially on the side of the active light emitting layer facing away from the photonic crystal layer. The driving module makes electrical contact with surfaces of the first electrode and the second electrode facing away from the photonic crystal layer. The driving module outputs driving signals to the first electrode and the second electrode to drive the active light emitting layer to generate photons. The photons are incident into the photonic crystal layer to generate a laser light through oscillation on Bragg diffraction. An optical system is also disclosed.

A photonic crystal surface-emitting laser includes a light emitting module and a driving module. The light emitting module includes a photonic crystal layer, an active light emitting layer on a side of the photonic crystal layer, a first electrode on a side of the active light emitting layer facing away from the photonic crystal layer, and a second electrode partially on the side of the active light emitting layer facing away from the photonic crystal layer. The driving module makes electrical contact with surfaces of the first electrode and the second electrode facing away from the photonic crystal layer. The driving module outputs driving signals to the first electrode and the second electrode to drive the active light emitting layer to generate photons. The photons are incident into the photonic crystal layer to generate a laser light through oscillation on Bragg diffraction. An optical system is also disclosed.

A photonic crystal surface-emitting laser device includes a substrate, a light emitting layer located on a surface of the substrate, a photonic crystal layer located on a side of the light emitting layer facing away from the substrate, and a metasurface located on a side of the substrate facing away from the photonic crystal layer. The light emitting layer is configured to generate photons. The photons incident into the photonic crystal layer generate laser light through a vibration on Bragg diffraction. The metasurface includes a base and a plurality of pillars arranged on a surface of the base at intervals, at least two of the plurality of pillars have different shapes and/or different sizes. The metasurface is configured to receiving the laser light, diffracting the laser light and then emitting the laser light. An optical system having the photonic crystal surface-emitting laser device is also provided.

A photonic crystal surface-emitting laser device includes a substrate, a light emitting layer located on a surface of the substrate, a photonic crystal layer located on a side of the light emitting layer facing away from the substrate, and a metasurface located on a side of the substrate facing away from the photonic crystal layer. The light emitting layer is configured to generate photons. The photons incident into the photonic crystal layer generate laser light through a vibration on Bragg diffraction. The metasurface includes a base and a plurality of pillars arranged on a surface of the base at intervals, at least two of the plurality of pillars have different shapes and/or different sizes. The metasurface is configured to receiving the laser light, diffracting the laser light and then emitting the laser light. An optical system having the photonic crystal surface-emitting laser device is also provided.

In an example embodiment, a system includes a first grating-coupled laser (GCL) that includes a first laser cavity optically coupled to a first transmit grating coupler configured to redirect horizontally-propagating first light, received from the first laser cavity, vertically downward and out of the first GCL. The system also includes a second GCL that includes a second laser cavity optically coupled to a second transmit grating coupler configured to transmit second light vertically downward and out of the second GCL. The system also includes a photonic integrated circuit (PIC) that includes a first receive grating coupler optically coupled to a first waveguide and configured to receive the first light and couple the first light into the first waveguide. The PIC also includes a second receive grating coupler optically coupled to a second waveguide and configured to receive the second light and couple the second light into the second waveguide.

An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

A bound states in the continuum (BIC) surface emitting laser includes a light emitter configured to generate BIC light waves. The laser also includes an array of holes with equal radii extending through the light emitter such that light emitted by the light emitter upon receipt of power is emitted as a coherent vortex beam at an angle to a surface normal of the light emitter that is determined at least in part by the radius of the holes in the array.

A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.