A light emitting element includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 made of GaN-based compound semiconductors are stacked, a mode loss acting portion 54 provided on the second compound semiconductor layer 22 and configuring a mode loss acting region 55 that acts upon increase or decrease of oscillation mode loss, a second electrode 32, a second light reflection layer 42, a first light reflection layer 41, and a first electrode 31. A current injection region 51, a current non-injection inner side region 52 that surrounds the current injection region 51 and a current non-injection outer side region 53 that surrounds the current non-injection inner side region 52 are formed on the stacked structure 20, and a projection image of the mode loss acting region 55 and a projection image of the current non-injection outer side region 53 overlap with each other.

A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.

An active layer is provided on a side closer to the second conductivity type cladding layer than a center of the light guide layer in the light guide layer. A first conductivity type low-refractive-index layer is formed between the first conductivity type cladding layer and the light guide layer and has a refractive index which is lower than a refractive index of the first conductivity type cladding layer. A layer thickness d of the light guide layer is a value at which a high-order mode equal to or higher than a first-order mode is permissible in a crystal growing direction by satisfying $\frac{2}{}\sqrt{n_g^2-n_c^2}\frac{d}{2}\frac{}{2}.$
The active layer is disposed at a position where a light confinement of the active layer becomes smaller compared to a case in which the active layer is disposed at a center of the light guide layer while there is not the first conductivity type low-refractive-index layer.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.

In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.

An active layer is provided on a side closer to the second conductivity type cladding layer than a center of the light guide layer in the light guide layer. A first conductivity type low-refractive-index layer is formed between the first conductivity type cladding layer and the light guide layer and has a refractive index which is lower than a refractive index of the first conductivity type cladding layer. A layer thickness d of the light guide layer is a value at which a high-order mode equal to or higher than a first-order mode is permissible in a crystal growing direction by satisfying

[00001]$\frac{2.Math.}{}.Math.\sqrt{n_g^2-n_c^2}.Math.\frac{d}{2}\frac{}{2}.$

The active layer is disposed at a position where a light confinement of the active layer becomes smaller compared to a case in which the active layer is disposed at a center of the light guide layer while there is not the first conductivity type low-refractive-index layer.

Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

A laser system includes an edge emitting semiconductor laser, and an optical fiber, wherein the laser emits one or more laser beams coupled into the optical fiber and the laser includes a semiconductor body including a waveguide region that includes first and second waveguide layers and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region, a phase structure is formed in the semiconductor body, includes a cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer composed of a semiconductor material different from the material of the second cladding layer is embedded therein, and the cutout extends from the top side of the semiconductor body at least partly into the first intermediate layer.

A light-emission device includes: a first light emitting element chip; a second light emitting element chip having a light output higher than a light output of the first light emitting element chip, the second light emitting element chip being configured to be driven independently from the first light emitting element chip and arranged side by side with the first light emitting element chip; and a light diffusion member including a first region provided on an emission path of the first light emitting element chip and a second region provided on an emission path of the second light emitting element chip, and having a diffusion angle at the second region larger than a diffusion angle at the first region.