A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

A narrow-band diode pumped alkali laser (DPAL) comprising a diode emitter assembly of broad area diode lasers arranged in a stack or array to emit longitudinally at a power level in a power range of 10-1500 W through a frequency selective element assembly aligned and positioned in an external laser cavity to the diode emitter assembly. The frequency selective element assembly comprising: an optical cell containing alkali vapor positioned between a pair of crossed polarizers; a partially reflective mirror that reflects a portion of light passing through the optical cell back toward the diode emitter assembly; and magnetic field producing components that produce a magnetic field through the optical cell that creates a 90 polarization of light passing through the optical cell at a narrow-band frequency corresponding to the absorption line of alkali atom, attenuating components of the light passing through the optical cell at frequencies outside of the narrow-band frequency.

A high-power laser diode assembly uses a greater number of emitters in a laser diode package or uses larger, wider laser diode emitters to produce higher-power laser output. Each assembly design option includes a meniscus slow axis collimator lens having a light entrance surface imparting strong negative lens surface power to diverge an incident beam outwards and a light exit surface imparting even stronger positive lens surface power to collimate the rapidly diverging beam. In one example, a 5 mm focal length meniscus collimator lens, as compared to a standard 12 mm focal length collimator lens, can reduce by 7 mm the physical path from the collimator lens to the laser diode. In another example, a 15 mm focal length meniscus collimator lens with the same back focal length as that of a standard 12 mm collimator facilitates increasing chip-on-submount width from 200 m to 250 m.

Apparatus comprise a semiconductor waveguide extending along a longitudinal axis and including a first waveguide section and a second waveguide section, wherein a lateral refractive index difference defining the semiconductor waveguide is larger for the first waveguide section than for the second waveguide section, and an output facet situated on the longitudinal axis of the semiconductor waveguide so as to emit a laser beam propagating in the semiconductor waveguide, wherein the first waveguide section is situated between the second waveguide section and the output facet and wherein the lateral refractive index difference suppresses emission of higher order transverse modes in the laser beam emitted by the output facet.

A high-power laser diode assembly uses a greater number of emitters in a laser diode package or uses larger, wider laser diode emitters to produce higher-power laser output. Each assembly design option includes a meniscus slow axis collimator lens having a light entrance surface imparting strong negative lens surface power to diverge an incident beam outwards and a light exit surface imparting even stronger positive lens surface power to collimate the rapidly diverging beam. In one example, a 5 mm focal length meniscus collimator lens, as compared to a standard 12 mm focal length collimator lens, can reduce by 7 mm the physical path from the collimator lens to the laser diode. In another example, a 15 mm focal length meniscus collimator lens with the same back focal length as that of a standard 12 mm collimator facilitates increasing chip-on-submount width from 200 m to 250 m.

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.

A stabilized diode laser device is disclosed, which includes a unibody mounting plate that is mated mechanically to a thermoelectric cooler. The unibody mounting plate comprises chambers in which components, including a laser diode, are aligned and secured. A combination of the secured components within the unibody mounting plate, along with the thermoelectric cooler, provides stabilization of the laser diode.

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

An optical device includes a substrate and an epitaxial layer structure disposed over the substrate. The epitaxial layer structure includes a first clad layer disposed over the substrate, a first waveguide layer disposed over the first clad layer, an active layer disposed over the first waveguide layer, a second waveguide layer disposed over the active layer, a second clad layer disposed over the second waveguide layer, and a cap layer disposed over the second clad layer. The optical device further includes a pair of trenches formed in an inner region of a surface of the epitaxial layer structure, and a pair of grooves, each formed in an outer region of the surface of the epitaxial layer structure. Each trench does not extend into the active layer, and each groove extends into the active layer. A light-current curve associated with the laser optical device is kink-free and/or smooth.