The present invention relates to a laser bar with reduced lateral far-field divergence and, more particularly, to a laser bar with a uniform temperature profile in the lateral direction to reduce lateral far-field divergence.

A laser bar (1) according to the invention comprises a plurality of emitter structures arranged in parallel next to one another in the lateral direction, wherein, for the variation of the temperature profile in lateral direction, an adjustment of the dissipated thermal power of the outer emitter structures is made with respect to the inner emitter structures enclosed by the outer emitter structures.

A projector projects an image on an object in a focus-free manner. The projector includes a transmissive spatial light modulator (20) that forms a two-dimensional pattern for defining the image; and a laser light source (10) that irradiates the spatial light modulator (20) with laser light (30). The spatial light modulator (20) generates a bundle of a plurality of light beams (300), having a spatial intensity distribution of the two-dimensional pattern, from the laser light (30).

A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.

A semiconductor laser diode is specified, comprising a semiconductor layer sequence (1) with semiconductor layers applied vertically one above another with an active layer (11), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (1), and a heat barrier layer (2) and a metallic contact layer (5) laterally adjacent to one another on a main surface (12) of the semiconductor layer sequence (1), wherein the heat barrier layer (2) is formed by an electrically insulating porous material (9). As a result, the heat arising during operation is conducted via the p-type electrode (5) to a heat sink (20) and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.

A broad area semiconductor diode laser device includes a multiple flared oscillator waveguide including a plurality of component flared oscillator waveguides, each component flared oscillator waveguide including a multimode high reflector facet, a partial reflector facet spaced apart from the high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1, and wherein the component flared oscillator waveguides of the multiple flared oscillator waveguide are arranged in a row such that portions of the flared current injection regions of adjacently situated component flared oscillator waveguides overlap each other or are in proximity to each other on the order of the wavelength of light emitted by the component flared oscillator waveguides.

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 210.sup.4 and by at most 510.sup.3.

Apparatus comprise a semiconductor waveguide extending along a longitudinal axis and including a first waveguide section and a second waveguide section, wherein a lateral refractive index difference defining the semiconductor waveguide is larger for the first waveguide section than for the second waveguide section, and an output facet situated on the longitudinal axis of the semiconductor waveguide so as to emit a laser beam propagating in the semiconductor waveguide, wherein the first waveguide section is situated between the second waveguide section and the output facet and wherein the lateral refractive index difference suppresses emission of higher order transverse modes in the laser beam emitted by the output facet.

A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.

Emitter width of an LD is set greater than a diameter, of a core, in an entrance end surface of an optical fiber. An optical system provided between the LD and the optical fiber causes a diameter, of laser beam, in the entrance end surface of the optical fiber to become smaller than the diameter, of the core, in the entrance end surface of the optical fiber. The LD is configured so that a beam parameter product of the laser beam emitted from the LD shows a local minimal value which changes in accordance with the emitter width of the LD, and which is equal to or smaller than a beam parameter product of the optical fiber. The emitter width of the LD is set so that the beam parameter product of the laser beam emitted from the LD is equal to or smaller than that of the optical fiber.

Aspects of the present disclosure describe systems, methods, and structures that advantageously amplify optical signals through the effect of optical pump signals generated by a multicore laser diode and multicore rare-earth doped optical fiber in optical communication with a 3D waveguide structure and a multicore input signal fiber providing a plurality of optical signals for amplification.