Disclosed is a surface etched grating semiconductor laser with periodic pumping structure. The structure includes a lower doped dielectric layer, a multiple quantum well active layer, a ridge-shaped doped dielectric layer, periodic grating grooves formed on the ridge-shaped doped dielectric layer and a top electrical contact layer forming ohmic electrical contact with electrical contact regions between the grating grooves. Carriers are injected through the periodic electrical contact layer, flow through the electrical contact regions, spread laterally when reaching the bottom of the grating grooves, and then continue to spread to the multiple quantum well active layer. In a case of uniform distribution, a laser based on refractive index modulation is realized. In a case of non-uniform distribution, a laser with mixed modulation is realized by introducing additional gain modulation.

Disclosed is a surface etched grating semiconductor laser with periodic pumping structure. The structure includes a lower doped dielectric layer, a multiple quantum well active layer, a ridge-shaped doped dielectric layer, periodic grating grooves formed on the ridge-shaped doped dielectric layer and a top electrical contact layer forming ohmic electrical contact with electrical contact regions between the grating grooves. Carriers are injected through the periodic electrical contact layer, flow through the electrical contact regions, spread laterally when reaching the bottom of the grating grooves, and then continue to spread to the multiple quantum well active layer. In a case of uniform distribution, a laser based on refractive index modulation is realized. In a case of non-uniform distribution, a laser with mixed modulation is realized by introducing additional gain modulation.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

A semiconductor laser element includes: a substrate; and a laser array portion that includes a plurality of light emitting portions arranged side by side, and is stacked above the substrate, wherein a stacked body of the substrate and the laser array portion includes a pair of resonator end faces on opposite faces, and a groove portion that extends from the laser array portion into the substrate is provided on at least one of the pair of resonator end faces between two adjacent light emitting portions among the plurality of light emitting portions.

A laminate (22) is formed on a semiconductor substrate (10). Two or more grooves (54) are formed in the laminate (22). A mesa (24) with two grooves among the two or more grooves (54) positioned on both sides is formed. An insulating resin film (30) is embedded into the two or more grooves (54). A first opening (32) is formed at the insulating resin film (30) embedded in one of the two or more grooves (54) and an electrode (46) extracted upward from a bottom surface (36) is formed. A first side surface (34) of the insulating resin film (30) is inclined in a forward tapered direction.