There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

The present disclosure falls into the field of optoelectronics, particularly, includes the design, epitaxial growth, fabrication, and characterization of Laser Diodes (LDs) operating in the ultraviolet (UV) to infrared (IR) spectral regime on patterned substrates (PSs) made with (formed on) low cost, large size Si, or GaN on sapphire, GaN, and other wafers. We disclose three types of PSs, which can be universal substrates, allowing any materials (III-Vs, II-VIs, etc.) grown on top of it with low defect and/or dislocation density.

The present disclosure falls into the field of optoelectronics, particularly, includes the design, epitaxial growth, fabrication, and characterization of Laser Diodes (LDs) operating in the ultraviolet (UV) to infrared (IR) spectral regime on patterned substrates (PSs) made with (formed on) low cost, large size Si, or GaN on sapphire, GaN, and other wafers. We disclose three types of PSs, which can be universal substrates, allowing any materials (III-Vs, II-VIs, etc.) grown on top of it with low defect and/or dislocation density.

The present disclosure discloses a sector-shaped closely-packed laser generator, comprising a module packaging unit and a closely-packed output unit; the module packaging unit is provided therein with a plurality of single-die modules, and each of the single-die modules has a coupling optical fiber; the closely-packed output unit is provided therein with a silicon wafer whose surface has a plurality of V-shaped grooves, and the plurality of V-shaped grooves are arranged into a sector shape; and the coupling optical fibers of the single-die modules protrude from the module packaging unit and enter the closely-packed output unit, and are arranged in the V-shaped grooves after coating layers being stripped, to emit laser lights in directions of the arrangement of the V-shaped grooves. In the present application, the plurality of single-die modules are collectively disposed in the module packaging unit, and the coupling optical fibers of the single-die modules are led out and arranged in the V-shaped grooves arranged in a sector shape, which realizes the close arrangement of the coupling optical fibers, obtains the effect of modularized and integrated packaging of single die, and effectively reduces the volume of the laser generator. Furthermore, by closely arranging the coupling optical fibers in the V-shaped grooves arranged in a sector shape, the present disclosure can control the light emitting direction of the coupling optical fibers.

The present disclosure discloses a sector-shaped closely-packed laser generator, comprising a module packaging unit and a closely-packed output unit; the module packaging unit is provided therein with a plurality of single-die modules, and each of the single-die modules has a coupling optical fiber; the closely-packed output unit is provided therein with a silicon wafer whose surface has a plurality of V-shaped grooves, and the plurality of V-shaped grooves are arranged into a sector shape; and the coupling optical fibers of the single-die modules protrude from the module packaging unit and enter the closely-packed output unit, and are arranged in the V-shaped grooves after coating layers being stripped, to emit laser lights in directions of the arrangement of the V-shaped grooves. In the present application, the plurality of single-die modules are collectively disposed in the module packaging unit, and the coupling optical fibers of the single-die modules are led out and arranged in the V-shaped grooves arranged in a sector shape, which realizes the close arrangement of the coupling optical fibers, obtains the effect of modularized and integrated packaging of single die, and effectively reduces the volume of the laser generator. Furthermore, by closely arranging the coupling optical fibers in the V-shaped grooves arranged in a sector shape, the present disclosure can control the light emitting direction of the coupling optical fibers.

A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

The present disclosure discloses a sector-shaped closely-packed laser generator, comprising a module packaging unit and a closely-packed output unit; the module packaging unit is provided therein with a plurality of single-die modules, and each of the single-die modules has a coupling optical fiber; the closely-packed output unit is provided therein with a silicon wafer whose surface has a plurality of V-shaped grooves, and the plurality of V-shaped grooves are arranged into a sector shape; and the coupling optical fibers of the single-die modules protrude from the module packaging unit and enter the closely-packed output unit, and are arranged in the V-shaped grooves after coating layers being stripped, to emit laser lights in directions of the arrangement of the V-shaped grooves. In the present application, the plurality of single-die modules are collectively disposed in the module packaging unit, and the coupling optical fibers of the single-die modules are led out and arranged in the V-shaped grooves arranged in a sector shape, which realizes the close arrangement of the coupling optical fibers, obtains the effect of modularized and integrated packaging of single die, and effectively reduces the volume of the laser generator. Furthermore, by closely arranging the coupling optical fibers in the V-shaped grooves arranged in a sector shape, the present disclosure can control the light emitting direction of the coupling optical fibers.

A mesa (34) includes a resonator and a second conductivity type contact layer (24). Grooves (32) are provided on both sides of the mesa (34). The first conductivity type contact layer (12) and a side face of the mesa (34) including an end face of the resonator construct an L shape (50). The first conductivity type contact layer (12) constructs bottom surfaces of the L shape (50) and the grooves (32). A side face of the groove (32) includes a slope (38) near the bottom surface (46) and a side face (42) above. A side face of the L shape (50) includes a slope (40) near the bottom surface (48) and a side face (44) above. A first electrode (28) is connected to the first conductivity type contact layer (12) at the bottom surface (46) of the groove (32). A second electrode (30) is connected to the second conductivity type contact layer (24) above the mesa (34).

There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.