A method of fabricating an optoelectronic component within a silicon-on-insulator substrate, the method comprising: providing a silicon-on-insulator (SOI) substrate, the SOI substrate comprising a silicon base layer, a buried oxide (BOX) layer on top of the base layer, and a silicon device layer on top of the BOX layer; etching a first cavity region into the SOI substrate and etching a second cavity region into the SOI substrate, the first cavity region having a first depth and the second cavity region having a second depth, the second depth being greater than the first depth; depositing a multistack epi layer into the first and the second cavity regions simultaneously, the multistack epi layer comprising a first multistack portion comprising a first active region and a second multistack portion comprising a second active region.

The invention relates to an optoelectronic device comprising a semiconductor layer 10 formed from a central segment 20 and at least two lateral segments forming tensioning arms 30 that extend along a longitudinal axis A1. The semiconductor layer 10 furthermore comprises at least two lateral segments forming electrical biasing arms 40 that extend along a transverse axis A2 orthogonal to the axis A1.

The invention relates to a process for fabricating an optoelectronic device (1) for emitting infrared radiation, comprising the following steps: i) producing a first stack (10) comprising: alight source (11), a first bonding sublayer (17) made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack (20) comprising: a GeSn-based active layer (23) obtained by epitaxy at an epitaxy temperature (T.sub.epi), a second bonding sublayer (25) made from said metal of interest, iii) determining an assembly temperature (Tc) substantially comprised between an ambient temperature (T.sub.amb) and said epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of said metal of interest is higher than or equal to 0.5 J/m.sup.2; iv) joining, by direct bonding, at said assembly temperature (Tc), said stacks (10, 20).

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 510.sup.18 cm.sup.3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 210.sup.19 cm.sup.3.

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

A laser source including a germanium-based semiconductor layer, including a suspended membrane formed of a tensilely stressed central portion and including an optical amplification section, and a plurality of tensioning arms. It includes an integrated waveguide, which participates in forming an optical cavity and which is located level with the carrier layer and at distance from the suspended membrane, the waveguide including a coupling section located facing the optical application section, which is suitable for allowing evanescent-wave optical coupling to the latter, and at least one curved section, which extends the coupling section, and which is arranged so that the integrated waveguide is placed at distance, in orthogonal projection, from the tensioning arms.

A structure having first and second layers is disposed on a substrate. The second layer is disposed on the first layer, is compressively strained, and comprises the alloy including germanium and tin. The structure comprises first and second members spaced a distance from each other along a direction, a strip located between the first and second members and extending along an axis intersecting the direction, and arms connecting the first and second members to a first end of the strip. The first and second members, the strip and the arms comprise respective portions of the first and second layers. A portion of the first layer at the strip and arms is removed such that the strip and arms become suspended and the arms remain anchored to the first layer via the first and second members. Tensile strain is induced in the alloy via the arms. The alloy may perform lasing.

A laser source including a germanium-based semiconductor layer, including a suspended membrane formed of a tensilely stressed central portion and including an optical amplification section, and a plurality of tensioning arms. It includes an integrated waveguide, which participates in forming an optical cavity and which is located level with the carrier layer and at distance from the suspended membrane, the waveguide including a coupling section located facing the optical application section, which is suitable for allowing evanescent-wave optical coupling to the latter, and at least one curved section, which extends the coupling section, and which is arranged so that the integrated waveguide is placed at distance, in orthogonal projection, from the tensioning arms.

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.